公开(公告)号：US20220336353A1

公开(公告)日：2022-10-20

申请号：US17849836

申请日：2022-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAEYONG BAE ,  HOONSEOK SEO

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

Abstract: Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a first insulating layer and a plurality of metal wires on the first insulating layer. The plurality of metal wires may include a first metal wire including a first upper surface and a first lower surface that faces the first insulating layer and a second metal wire including a second upper surface and a second lower surface that faces the first insulating layer and is coplanar with the first lower surface. The first metal wire may have a first width monotonically decreasing from the first lower surface to the first upper surface, and the second metal wire may have a second width monotonically increasing from the second lower surface to the second upper surface.