公开(公告)号：US20250142823A1

公开(公告)日：2025-05-01

申请号：US18755840

申请日：2024-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geunwon Lim ,  Youngho Kwon ,  Chungjin Kim ,  Jungho Lee ,  Yunkyu Jung

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

Abstract: A semiconductor device may include a plate layer, gate electrodes spaced apart from each other in a first direction perpendicular to an upper surface of the plate layer on the plate layer, extending to different lengths in a second direction perpendicular to the first direction and forming step regions, channel structures penetrating through the gate electrodes, extending in the first direction, and each including a channel layer, isolation regions penetrating through the gate electrodes and extending in the first direction and the second direction, sacrificial insulating layers on the same levels as levels of the gate electrodes, respectively, a through-via penetrating through the sacrificial insulating layers and extending in the first direction, a dam structure surrounding the through-via, and a guard structure spaced apart from the dam structure horizontally and having a closed loop shape surrounding the dam structure on a plan view.

公开(公告)号：US11469171B2

公开(公告)日：2022-10-11

申请号：US17021065

申请日：2020-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kihyun Kim ,  Youngho Kwon ,  Sangrok Lee

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/1157 ,  H01L27/11524 ,  H01L27/11582 ,  H01L27/11556

Abstract: A semiconductor device includes a lower circuit structure including a lower conductive pattern on a substrate, a middle wiring structure including horizontal wiring on the lower circuit structure, and a middle circuit structure on the middle wiring structure and including a stacked structure of alternating wiring and insulation layers. A channel structure extends through the stacked structure and contacts the horizontal wiring. A contact plug contacting the first lower conductive pattern and the horizontal wiring is in the middle wiring structure. A lowermost end of the channel structure is farther from a top of the substrate than a bottom of the horizontal wiring. An uppermost end of the contact plug is farther from the top of the substrate than the bottom of the horizontal wiring. The uppermost end of the contact plug is closer to the top of the substrate than a lowermost end of the wiring layers.