公开(公告)号：US20190371380A1

公开(公告)日：2019-12-05

申请号：US16000816

申请日：2018-06-05

Applicant: SanDisk Technologies LLC

Inventor： Yadhu Vamshi Vancha ,  James Hart ,  Jeffrey Koon Yee Lee ,  Tz-Yi Liu ,  Ali Al-Shamma ,  Yingchang Chen

IPC: G11C8/08 ,  G11C7/12 ,  G11C7/08

Abstract: One or more control lines other than those used to activate a non-volatile memory cell may be used to sense a data value of the cell. For example, an apparatus may include a selection circuit that selects, based on an address corresponding to a non-volatile memory cell included an array of non-volatile memory cells, a word line coupled to the non-volatile memory cells to activate the non-volatile memory cell. An amplifier circuit may sense a data value stored in the non-volatile memory cell based on a sense signal having a voltage level based on voltage levels of one or more other word lines of the array of non-volatile memory cells. In another example, a data value of a non-volatile memory cell coupled to a word line may be sensed based on the voltage levels of one or more dummy sense lines within the array.

公开(公告)号：US10734048B2

公开(公告)日：2020-08-04

申请号：US16000816

申请日：2018-06-05

Applicant: SanDisk Technologies LLC

Inventor： Yadhu Vamshi Vancha ,  James Hart ,  Jeffrey Koon Yee Lee ,  Tz-Yi Liu ,  Ali Al-Shamma ,  Yingchang Chen

IPC: G11C8/08 ,  G11C7/08 ,  G11C7/12

Abstract: One or more control lines other than those used to activate a non-volatile memory cell may be used to sense a data value of the cell. For example, an apparatus may include a selection circuit that selects, based on an address corresponding to a non-volatile memory cell included an array of non-volatile memory cells, a word line coupled to the non-volatile memory cells to activate the non-volatile memory cell. An amplifier circuit may sense a data value stored in the non-volatile memory cell based on a sense signal having a voltage level based on voltage levels of one or more other word lines of the array of non-volatile memory cells. In another example, a data value of a non-volatile memory cell coupled to a word line may be sensed based on the voltage levels of one or more dummy sense lines within the array.