公开(公告)号：US06372668B1

公开(公告)日：2002-04-16

申请号：US09484603

申请日：2000-01-18

申请人： Sey-Ping Sun ,  Homi Nariman ,  Hartmut Ruelke

发明人： Sey-Ping Sun ,  Homi Nariman ,  Hartmut Ruelke

IPC分类号： H01L2131

摘要： The present invention is directed to a method of forming process layers comprised of silicon oxynitride. In one embodiment, the method comprises positioning a wafer in a process chamber, introducing silane and nitrous oxide into the chamber at a flow rate ratio ranging from approximately 2.6-3.8 silane to nitrous oxide, and generating a plasma in the chamber using a high frequency to low frequency power setting ratio ranging from approximately 1.2-1.8.