公开(公告)号：US10917081B1

公开(公告)日：2021-02-09

申请号：US16815435

申请日：2020-03-11

Applicant: Silicon Laboratories Inc.

Inventor： Long Nguyen ,  Ion C. Tesu ,  Michael L. Duffy ,  John N. Wilson

IPC: H03K17/08 ,  H03K17/0812 ,  H02M1/08 ,  H03K17/18 ,  H03K17/082 ,  H03K17/081 ,  H03K17/16

Abstract: An apparatus controls a high-power drive device external to a package of a gate driver circuit. A first circuit charges the control node over a first length of time in response to a first signal through the first node indicating an absence of a fault condition and a first level of a control signal. A second circuit discharges the control node over a second length of time in response to a second signal through the second node indicating the absence of the fault condition and a second level of a control signal. A third circuit includes a current amplifier and is configured as a soft shutdown path to discharge the control node over a third length of time in response to the first signal through the first node indicating a presence of the fault condition. The third length of time is different from the second length of time.