公开(公告)号：US12158671B2

公开(公告)日：2024-12-03

申请号：US18352288

申请日：2023-07-14

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Qunfang Liang ,  Yani Chen ,  Kang Lu

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/13357 ,  G02F1/1337 ,  G02F1/1362

Abstract: A display panel and a display device are provided. The display panel includes a first substrate and the second substrate disposed oppositely, a plurality of liquid crystal molecules disposed between the first substrate and the second substrate, a plurality of pixel electrodes, a plurality of light-shielding electrodes and a plurality of auxiliary electrodes disposed on a same layer as the pixel electrodes. A first gap is defined between adjacent ones of the pixel electrodes, each light-shielding electrode is correspondingly disposed in a spacing. Each auxiliary electrode is located between an adjacent pixel electrode and a light-shielding electrode, a voltage applied to each auxiliary electrode is equal to a voltage applied to corresponding pixel electrode. An electric field is formed between the auxiliary electrode and the corresponding light-shielding electrode.

公开(公告)号：US20230411532A1

公开(公告)日：2023-12-21

申请号：US17814519

申请日：2022-07-24

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Qunfang Liang

IPC: H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/78609

Abstract: A thin film transistor (TFT) device is provided. The TFT device includes a substrate, a semiconductor channel layer, an ohmic contact layer, and a source-drain layer that are sequentially arranged on one side of the substrate. In the channel region, a compensation pattern is disposed on a surface of the semiconductor channel layer away from the substrate. The compensation pattern and the semiconductor channel layer are different types of semiconductors. By disposing the compensation pattern on the surface of the semiconductor channel layer away from the substrate, the compensation pattern and the semiconductor channel layer are different types of semiconductors, the compensation pattern can further improve a conductivity of a PNP structure, or the compensation pattern can further reduce a leakage current of a NPN structure.