公开(公告)号：US20210408269A1

公开(公告)日：2021-12-30

申请号：US16758051

申请日：2020-01-07

Applicant: TCL China Star Optoelectronics Technology Co., Ltd.

Inventor： Huafei XIE ,  Shujhih CHEN ,  Chiayu LEE

IPC: H01L29/66 ,  H01L21/02 ,  H01L51/00 ,  H01L27/28

Abstract: The present disclosure provides a manufacturing method of a complementary metal-oxide-semiconductor (CMOS) inverter includes annealing a substrate printed with an oxide ink to obtain a first active layer, printing a carbon tube ink between a first source and the first drain to form a second active layer for obtaining a first thin-film transistor (TFT), forming a second source and a second drain on two sides of the first active layer to obtain a second TFT, and forming wires between the first TFT and the second TFT.