公开(公告)号：US20230386745A1

公开(公告)日：2023-11-30

申请号：US18315563

申请日：2023-05-11

Applicant: TDK CORPORATION

Inventor： Yuichiro SUEDA ,  Kengo AIZAWA ,  Shota KUMAGAI ,  Takeshi SHOUJI ,  Satoshi SUGAWARA ,  Masatoshi TARUTANI ,  Atsushi YAMADA ,  Manabu KUMAGAI

IPC: H01G4/12 ,  H01G4/30 ,  H01G4/012 ,  H01G4/008 ,  C04B35/49

CPC classification number: H01G4/1227 ,  H01G4/30 ,  H01G4/012 ,  H01G4/008 ,  C04B35/49

Abstract: A dielectric composition, including: dielectric grains containing a main component represented by a composition formula [(CaxSr(1-x))O]m[(TiyHfzZr(1-y-z))O2] (m is more than 1.020); a grain boundary phase located between the dielectric grains; and segregation grains each containing at least Ca, Si, and O. A first segregation grain is defined as a segregation further containing Mn among the segregation grains each containing at least Ca, Si, and O, and a second segregation grain is defined as a segregation containing substantially no Mn among the segregation grains each containing at least Ca, Si, and O. N1/(N1+N2) is more than 0.23 and 1.00 or less, in which N1 is a number density of first segregation grains in a cross-section of the dielectric composition, and N2 is a number density of second segregation grains in the cross-section of the dielectric composition.