HIGH-SPEED SHORT-TO-GROUND PROTECTION CIRCUIT FOR PASS FIELD-EFFECT TRANSISTOR (FET)

    公开(公告)号:US20210091562A1

    公开(公告)日:2021-03-25

    申请号:US16843324

    申请日:2020-04-08

    Abstract: A system includes a power supply source and a power control circuit coupled to the power supply source, in which the power control circuit includes a pass field-effect transistor (FET). The system also includes a short-to-ground protection circuit coupled to an output of the pass FET. The short-to-ground protection circuit includes a sense circuit configured to detect when a magnitude and a change rate of a voltage drop at the output of the pass FET is greater than respective thresholds. The short-to-ground protection circuit also includes a control node at the output of the sense circuit. The sense circuit is configured to induce a control current at the control node in response to the magnitude and the change rate of a voltage drop at the output of the pass FET being greater than respective thresholds. The control current is used to turn off the pass FET.

    ELECTROMAGNETIC INTERFERENCE MITIGATION FOR SWITCHING REGULATORS

    公开(公告)号:US20220302840A1

    公开(公告)日:2022-09-22

    申请号:US17697008

    申请日:2022-03-17

    Abstract: In a switching regulator driver, a sense circuit has a transistor current input and a sense circuit output. A logic circuit has a logic circuit input and first and second outputs. The logic circuit input is coupled to the sense circuit output. A counter has a counter clock input, a counter control input and a counter output. The counter clock input is coupled to the first output. The counter control input is coupled to the second output. The counter is configured to provide a count value at the counter output. A programmable drive strength circuit has a drive strength circuit input and a transistor control output. The drive strength circuit input is coupled to the counter output. The programmable drive strength circuit is configured to adjust a drive current at the transistor control output based on the count value.

    LOW THRESHOLD VOLTAGE TRANSISTOR BIAS CIRCUIT

    公开(公告)号:US20220137659A1

    公开(公告)日:2022-05-05

    申请号:US17087003

    申请日:2020-11-02

    Abstract: A current mirror circuit includes a first current mirror transistor, a second current mirror transistor, and a bias circuit. The first current mirror transistor includes a gate and a drain. The second current mirror transistor includes a gate coupled to the gate of the first current mirror transistor. The first current mirror transistor and the second current mirror transistor are low threshold voltage transistors. The bias circuit is coupled to the gate and the drain of the first current mirror transistor. The bias circuit is configured to bias the first current mirror transistor to operate in a saturation mode when a threshold voltage of the first current mirror transistor is a negative voltage.

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