公开(公告)号：US20230238291A1

公开(公告)日：2023-07-27

申请号：US17736549

申请日：2022-05-04

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Shuqian Huang ,  Sheng Zou ,  Yuchen Li ,  Peng Li ,  Chao Zhuang ,  Zhiyun Liu

IPC: H01L21/66 ,  G05B19/418

CPC classification number: H01L22/20 ,  G05B19/4185 ,  G05B2219/40066

Abstract: The present disclosure generally relates to determining a process condition in a semiconductor process using attribute-relative process conditions. An example is a method of forming an integrated circuit (IC). First and second historical process conditions are obtained. The first historical process conditions are of previous semiconductor processing corresponding to a target value of a process attribute for forming the IC, and the second historical process conditions are of previous semiconductor processing corresponding to variable values of the process attribute. Attribute-relative process conditions are calculated. Each attribute-relative process condition is based on the first historical process conditions and the second historical process conditions that correspond to a respective given value of the variable values. An average process condition is determined from a subset of the attribute-relative process conditions. A process condition of a subsequent semiconductor process is set based on the average process condition.