公开(公告)号：US20230215737A1

公开(公告)日：2023-07-06

申请号：US17566942

申请日：2021-12-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Abbas Ali ,  Christopher Scott Whitesell ,  Pushpa Mahalingam ,  Uma Aghoram ,  Eddie Dee Pylant

IPC: H01L21/322

CPC classification number: H01L21/322 ,  H01L21/76224

Abstract: A method of forming an integrated circuit that includes placing a semiconductor substrate in a process chamber at an initial temperature, wherein one or more trenches are located within the semiconductor substrate. The temperature of the substrate is increased in a substantially oxygen-free ambient to an oxide-growth temperature. The temperature is then maintained at the oxide growth temperature while providing an oxidizing ambient, thereby forming an oxide layer on sidewalls of the trench. The temperature of the semiconductor wafer is then reduced to a final temperature below the initial temperature and removed from the process chamber.