公开(公告)号：US20240063118A1

公开(公告)日：2024-02-22

申请号：US17820020

申请日：2022-08-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： William Harrison ,  Sylvester Ankamah-Kusi ,  Yiqi Tang ,  Rajen M. Murugan

IPC: H01L23/528 ,  H01L23/00 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L24/13 ,  H01L23/5226 ,  H01L21/76885 ,  H01L2224/13025 ,  H01L2224/13147

Abstract: A semiconductor device is described herein. The semiconductor device generally includes a metal fabrication layer disposed on a substrate. The semiconductor device generally includes a dielectric layer having a first plurality of vias aligned with a first metallization region of the metal fabrication layer and a second plurality of vias aligned with a second metallization region of the metal fabrication layer, the dielectric layer disposed on top of the metal fabrication layer. The semiconductor device generally includes a metal layer disposed on the dielectric layer and having a plurality of metal routings, each of the metal regions disposed over both the first metallization region and the second metallization region, each of the plurality of metal routings have a same width. The semiconductor device generally includes an insulation layer disposed on the metal layer, the insulation layer having a plurality of openings to the metal routings of the metal layer.