公开(公告)号：US20220310952A1

公开(公告)日：2022-09-29

申请号：US16954331

申请日：2020-06-05

Applicant: TLC CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jinyang ZHAO

IPC: H01L51/50

Abstract: A QLED light-emitting device is provided, including a first electrode layer, an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, and a second electrode layer. Wherein, the light-emitting layer includes a plurality of quantum dot layers disposed in a stack, and insulating layers are disposed among the quantum dot layers adjacent to one side of the electron injection layer. Through disposing the insulating layers among the quantum dot layers adjacent to the one side of the electron injection layer, an electron transmission rate is reduced, thereby balancing the electron transmission rate and a hole transmission rate and improving luminous efficiency of QLEDs.