公开(公告)号：US20190272997A1

公开(公告)日：2019-09-05

申请号：US16308428

申请日：2017-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru TAHARA ,  Daisuke URAYAMA ,  Kenji MATSUMOTO ,  Hidenori MIYOSHI

IPC: H01L21/3065 ,  C23F4/00 ,  H01L21/3213 ,  H01L23/532 ,  H05H1/46

Abstract: A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container 12, and a third step of generating a plasma of a third gas in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.