公开(公告)号：US11152763B2

公开(公告)日：2021-10-19

申请号：US16622061

申请日：2018-08-27

Applicant: Taiyuan University Of Technology

Inventor： Mingjiang Zhang ,  Jianzhong Zhang ,  Ya'nan Niu ,  Yi Liu ,  Tong Zhao ,  Lijun Qiao ,  Anbang Wang ,  Yuncai Wang

IPC: H01S5/12 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/343 ,  H01S5/40

Abstract: An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.