摘要:
A magnetic sensor element 1 includes a substrate 10, a conductive layer 12 of a conductive material, and a magnetic layer 11 of a magnetic material, which encloses the conductive layer 12. AC is applied to the element from a drive power source 50, and a detector 60 detects an impedance change due to an external magnetic field. The magnetic layer 11 is bestowed with magnetic anisotropy in a direction orthogonal to the direction of energization of the element 1. With the provision of the conductive layer 12 of conductive material and also with magnetic anisotropy imparted to the magnetic layer 1, the element 1 may be made a low resistivity element. A reactance change and a resistance change of the element due to an external magnetic field change, thus can be effectively detected in drive frequencies two orders of magnitude lower than in the case of a prior art magnetic sensor element. The magnetic anisotropy of the magnetic layer 11 is controlled to prevent magnetic field detection dynamic range variations with drive frequency.
摘要:
There is provided a method for preparation of porous glass films, preferably in the form of a hollow filament, comprising heating glass films, formed from sodium borosilicate glass having a composition which can be phase-separated by heat-treatment into a soft phase easily eluted with a hot acid solution and a hard phase not easily eluted with the same solution, to separate the glass phase into the two phases and then subjecting the glass film to plasma etching in an atmosphere containing gaseous fluorine-containing compound(s) before or after acid elution of the soft phase. The thus obtained porous glass films have a uniform pore diameter and smooth surfaces and can be used as a variety of separating membranes.
摘要:
A force sensing element is provided with a gauge portion and a plurality of electrodes. The gauge portion is formed of an n-type semiconductor substrate whose (100)-face serves as a main face, a p-type semiconductor substrate whose (110)-face serves as a main face, or a p-type semiconductor substrate whose (111)-face serves as a main face, and is pressed in a thickness direction of the semiconductor substrate upon receiving a force. The electrodes are electrically connected to the gauge portion such that a current path extending in a direction corresponding to the thickness direction of the semiconductor substrate is formed in the gauge portion. The force sensing element thus constructed makes it possible to detect a force with high precision.
摘要:
A NOx sensing cell includes a solid electrolyte having oxide ion conductivity and a pair of electrodes electrically connected to the solid electrolyte. The measuring electrode includes an oxide portion and a noble metallic portion. The oxide portion includes the solid solution of zirconia containing at least ceria. The noble metallic portion contains at least two kinds of metallic elements selected from platinum group elements. In addition to the NOx sensing cell, a NOx sensing device includes a measuring chamber into which a sensing objective gas is introduced, and an oxygen pump cell which is capable of electrochemically removing the oxygen from the measuring chamber. The measuring electrode of the NOx sensing cell is positioned in the measuring chamber.
摘要:
A pressure sensor is realized wherein output error of sensor element can be reduced even in the case where the pressure sensor is utilized in high temperature conditions. A pressure sensor is provided with a housing 20, a diaphragm 24 that partitions the interior and the exterior of the housing 20, a sensor element 54 provided within the housing 20, output value of the sensor element 54 varying in accordance with force exerted thereupon, and a force transmitting rod 52 provided within the housing, the force transmitting rod 52 moving downwardly when a pressure is exerted upon the diaphragm 24, the force transmitting rod 52 thereby exerting force upon the sensor element 54. The diaphragm 24 has a central region 26 contacting with the force transmitting rod 52, and a surrounding region 27 surrounding the periphery of the central region 26 and connecting the central region 26 with the housing 20. The surrounding region 27, viewed cross-sectionally along the radius, is V-shaped or U-shaped, and cancels thermal expansion.
摘要:
A gas separation member comprises a porous substrate, e.g., a membrane or a wall, and a polymer film deposited by plasma polymerization on the surface of the substrate and composed of at least two layers, i.e., a first layer contiguous with the substrate and a second layer superimposed on the first layer. The polymer film of the first layer possesses a uniform chemical composition or chemical structure in the direction of film thickness, while the polymer film of the second layer has a chemical composition or chemical structure which changes continuously or stepwise in the direction of film thickness. The gas separation member combines high gas separation factor and a high gas permeation rate, permitting separation of a specific gas in a concentrated form from a mixed gas. It also excels in weatherability.
摘要:
A gas separating member of the present invention comprises a porous substrate in the form of a film, wall or hollow fiber and a polymer film formed on a surface of the substrate by plasma polymerization. The gas separation factor (O.sub.2 /N.sub.2) ranges from 2.3 to 3.9 with the corresponding gas permeability ranging from 12 to 0.16 liter/min. m.sup.2 atm. pres.-air.A modified gas separating member of the present invention, which comprises a porous substrate in the aforementioned form and two polymer films formed on a surface of the substrate by plasma polymerization, has the gas separation factor (He/H.sub.2) ranging from 14 to 45.
摘要翻译:本发明的气体分离部件包括膜,壁或中空纤维形式的多孔基材和通过等离子体聚合在基材的表面上形成的聚合物膜。 气体分离因子(O 2 / N 2)为2.3至3.9,相应的气体渗透率为12至0.16升/分钟。 m2 atm。 空气。 本发明的改性气体分离部件的气体分离系数(He / H 2)为14〜45,包括上述形式的多孔基材和通过等离子体聚合形成于基材表面的2个聚合物膜。
摘要:
A gas sensor has a gas diffusion barrier that supports therein a catalyst that catalyzes a reaction between combustible components and oxygen; a solid electrolyte having oxide ion conductivity; and electrodes formed on opposite surfaces of the solid electrolyte. The electrode is formed in a region into which ambient gas diffuses at a rate limited by the gas diffusion barrier. The electrode also catalyzes the reaction between combustible gas and oxygen. The electrode is formed in a region into which atmosphere is introduced.
摘要:
A process for manufacturing a hollow silicon structure is simplified. A device for manufacturing the silicon structure is a device that manufactures the hollow silicon structure by processing a silicon structure, the silicon structure consisting of a silicon oxide layer formed on a silicon substrate, the silicon oxide layer being covered by a silicon layer. The device is provided with first gas supply members 20 and 21, second gas supply members 30 and 31, an etching reaction chamber 10, selective connecting means 23 to 26, 34 and 35, and a gas discharging means 42. The first gas etches silicon. The second gas etches silicon oxide and barely etches silicon. The selective connecting means 23 to 26, 34 and 35 selectively connect the etching reaction chamber 10 with either the first gas supply members 20 and 21 or the second gas supply members 30 and 31. The gas discharging means 42 discharges gas from the etching reaction chamber 10.
摘要:
Electrode having high activity to oxygen gas and low activity to flammable gas is provided. An oxygen pump includes oxide-ion conductive solid electrolyte 2, electrode 8 which is an inactive electrode, and active electrode 10. Electrode 8 is an electrode that includes Ce0.8Sm0.2O2-α. Electrode 8 is disposed on the gas detection chamber 12 side of solid electrolyte 2. Active electrode 10 is disposed on the open space side of solid electrolyte 2. Gas detection chamber 12 is an enclosed space defined by solid electrolyte 2, insulation layers 6, and diffusion control layer 4.
摘要翻译:提供了对氧气具有高活性和对易燃气体的活性低的电极。 氧气泵包括氧化物离子传导性固体电解质2,作为非活性电极的电极8和有源电极10。 电极8是包括Ce 0.8 O 0.2 O 2 O 2-α的电极。 电极8设置在固体电解质2的气体检测室12侧。 活性电极10设置在固体电解质2的开放空间侧。 气体检测室12是由固体电解质2,绝缘层6和扩散控制层4限定的封闭空间。