公开(公告)号：US09431286B1

公开(公告)日：2016-08-30

申请号：US14555209

申请日：2014-11-26

Applicant: Texas Instruments Incorporated

Inventor： Sameer P Pendharkar ,  Binghua Hu ,  Abbas Ali ,  Henry Litzmann Edwards ,  John P. Erdeljac ,  Britton Robbins ,  Jarvis Benjamin Jacobs

IPC: H01L21/76 ,  H01L21/761 ,  H01L29/06 ,  H01L21/263

CPC classification number: H01L21/761 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/76286 ,  H01L29/0646

Abstract: A semiconductor device with a buried layer has a deep trench structure abutting the buried layer and a self-aligned sinker along sidewalls of the deep trench structure. The semiconductor device may be formed by forming a portion of a deep trench down to the buried layer, and implanting dopants into a substrate of the semiconductor device along sidewalls of the deep trench, and subsequently forming a remainder of the deep trench extending below the buried layer. Alternatively, the semiconductor device may be formed by forming the deep trench to extend below the buried layer, and subsequently implanting dopants into the substrate of the semiconductor device along sidewalls of the deep trench.

Abstract translation: 具有埋层的半导体器件具有邻近掩埋层的深沟槽结构和沿着深沟槽结构的侧壁的自对准沉降片。 半导体器件可以通过将深沟槽的一部分向下形成到掩埋层上，并且通过深沟槽的侧壁将掺杂剂注入到半导体器件的衬底中，并且随后形成深埋在沟槽下面的其余部分 层。 或者，半导体器件可以通过形成深沟槽以在掩埋层下方延伸而形成，并且随后沿着深沟槽的侧壁将掺杂剂注入到半导体器件的衬底中。