公开(公告)号：US20170175259A1

公开(公告)日：2017-06-22

申请号：US14979003

申请日：2015-12-22

Applicant: Texas Instruments Incorporated

Inventor： DOK WON LEE ,  MONA EISSA ,  NEAL THOMAS MURPHY

IPC: C23C16/06 ,  C23C16/56 ,  G01R33/04

CPC classification number: C23C16/06 ,  C23C16/56 ,  G01R33/04 ,  G01R33/045 ,  G01R33/05

Abstract: A method of magnetic forming an integrated fluxgate sensor includes providing a patterned magnetic core on a first nonmagnetic metal or metal alloy layer on a dielectric layer over a first metal layer that is on or in an interlevel dielectric layer (ILD) which is on a substrate. A second nonmagnetic metal or metal alloy layer is deposited including over and on sidewalls of the magnetic core. The second nonmagnetic metal or metal alloy layer is patterned, where after patterning the second nonmagnetic metal or metal alloy layer together with the first nonmagnetic metal or metal alloy layer encapsulates the magnetic core to form an encapsulated magnetic core. After patterning, the encapsulated magnetic core is magnetic field annealed using an applied magnetic field having a magnetic field strength of at least 0.1 T at a temperature of at least 150° C.