公开(公告)号：US10811326B1

公开(公告)日：2020-10-20

申请号：US16427119

申请日：2019-05-30

Applicant: Texas Instruments Incorporated

Inventor： Sebastian Meier ,  Michael Garbe

IPC: H01L21/00 ,  H01L21/66 ,  G01H9/00 ,  G01D5/24 ,  B23K26/362 ,  H01L21/268 ,  H01L23/544 ,  G01D5/14

Abstract: A method of detecting undesired surface effects while lasing a semiconductor during a laser marking, (dicing, fuse cutting or otherwise) process. A detection device is placed near the site of semiconductor lasing to detect erroneous laser markings resulting in the undesired surface effects. Upon identifying such a condition, lasing may be interrupted in-process.