利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.028 秒)

    LOW-FREQUENCY BIAS POWER IN HDP-CVD PROCESSES
    2.
    发明申请
    LOW-FREQUENCY BIAS POWER IN HDP-CVD PROCESSES 审中-公开
    HDP-CVD工艺中的低频偏置功率

    公开(公告)号：US20090263594A1

    公开(公告)日：2009-10-22

    申请号：US12493878

    申请日：2009-06-29

    申请人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    发明人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    IPC分类号： C23C16/50 ,  C23C16/40

    CPC分类号： H01J37/321

    摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

    摘要翻译： 衬底处理系统具有限定处理室的壳体。 设置在处理室内的衬底保持器在衬底处理期间支撑衬底。 气体输送系统将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体发生系统在处理室内形成密度大于1011离子/ cm3的等离子体。 射频偏置系统以小于5MHz的频率在衬底上产生电偏压。 控制器控制气体输送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。

    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam
    3.
    发明申请
    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam 失效
    用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置

    公开(公告)号：US20060192150A1

    公开(公告)日：2006-08-31

    申请号：US11414649

    申请日：2006-04-27

    申请人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

    发明人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

    IPC分类号： G21K5/10 ,  H01J37/08

    CPC分类号： H01J37/317 ,  H01J2237/0041

    摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

    摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

    Low-frequency bias power in HDP-CVD processes
    4.
    发明申请
    Low-frequency bias power in HDP-CVD processes 失效
    HDP-CVD工艺中的低频偏置功率

    公开(公告)号：US20060150913A1

    公开(公告)日：2006-07-13

    申请号：US11034515

    申请日：2005-01-10

    申请人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    发明人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： H01J37/321

    摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

    摘要翻译： 衬底处理系统具有限定处理室的壳体。 设置在处理室内的衬底保持器在衬底处理期间支撑衬底。 气体输送系统将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体发生系统在处理室内形成密度大于10 11 / cm 3的等离子体。 射频偏置系统以小于5MHz的频率在衬底上产生电偏压。 控制器控制气体输送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。

    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam
    5.
    发明授权
    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam 失效
    用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置

    公开(公告)号：US07425716B2

    公开(公告)日：2008-09-16

    申请号：US11414649

    申请日：2006-04-27

    申请人： Alexandros T. Demos ,  Khaled A. Elsheref ,  Yuri Trachuk ,  Tom K. Cho ,  Girish A. Dixit ,  Hichem M'Saad ,  Derek Witty

    发明人： Alexandros T. Demos ,  Khaled A. Elsheref ,  Yuri Trachuk ,  Tom K. Cho ,  Girish A. Dixit ,  Hichem M'Saad ,  Derek Witty

    IPC分类号： H02H23/00

    CPC分类号： H01J37/317 ,  H01J2237/0041

    摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

    摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

    Method of sputtering a carbon protective film on a magnetic disk by superimposing an AC voltage on a DC bias voltage
    6.
    发明授权
    Method of sputtering a carbon protective film on a magnetic disk by superimposing an AC voltage on a DC bias voltage 失效
    通过将AC电压叠加在DC偏置电压上来将碳保护膜溅射在磁盘上的方法

    公开(公告)号：US5507930A

    公开(公告)日：1996-04-16

    申请号：US299852

    申请日：1994-09-01

    申请人： Tsutomu T. Yamashita ,  Kyou H. Lee ,  Rajiv Y. Ranjan ,  Yuri Trachuk

    发明人： Tsutomu T. Yamashita ,  Kyou H. Lee ,  Rajiv Y. Ranjan ,  Yuri Trachuk

    IPC分类号： C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  G11B5/72 ,  G11B5/84 ,  H01F41/18

    CPC分类号： C23C14/35 ,  C23C14/0605 ,  G11B5/722 ,  G11B5/8408

    摘要： A carbon film for protecting a magnetic disk is sputtered by a DC magnetron sputtering method, with the addition of superimposed AC power on the DC power applied to the carbon target. When the carbon film is sputtered for extended period in a production sputtering machine, nodular growth occurs over the sputtering surface of the carbon target. Such nodules are variously called "warts" or "mushrooms" in the industry and they are detrimental to the productivity of the sputtering machine. The size and quantity of the nodules over the target surface increase as the target is sputtered longer, and because these region do not contribute to sputtering, the efficiency of the target decreases. As sputter efficiency decreases, power input must be increased to the target to make up for the loss in the effective sputtering area of the target. Eventually, the power input must be increased to a point where arcing occurs continuously and sputtering cannot be continued. By superimposing AC power onto the DC power applied to the target, virtually all arcing on the carbon target is eliminated, thereby significantly reducing the nodular growth and extending the use of the target.

    摘要翻译： 通过直流磁控溅射法溅射用于保护磁盘的碳膜，对施加到碳靶的DC电力加上叠加的AC电力。 当碳膜在生产溅射机中长时间溅射时，在碳靶的溅射表面上发生结核生长。 这种结节在工业中被称为“疣”或“蘑菇”，并且它们不利于溅射机的生产率。 目标表面上的结节的大小和数量随着靶溅射时间的延长而增加，并且由于这些区域对溅射没有贡献，因此靶的效率降低。 随着溅射效率的降低，必须将功率输入增加到目标，以弥补目标有效溅射区域的损耗。 最终，电源输入必须增加到连续发生电弧的点，溅射不能继续。 通过将AC电力叠加到施加到目标的DC电力上，实际上消除了碳靶上的所有电弧，从而显着降低了结节生长并延长了靶的使用。

    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam
    7.
    发明申请
    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam 审中-公开
    用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置

    公开(公告)号：US20050224722A1

    公开(公告)日：2005-10-13

    申请号：US11002600

    申请日：2004-12-01

    申请人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

    发明人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

    IPC分类号： H01J37/317

    CPC分类号： H01J37/317 ,  H01J2237/0041

    摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

    摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

    Low-frequency bias power in HDP-CVD processes
    8.
    发明授权
    Low-frequency bias power in HDP-CVD processes 失效
    HDP-CVD工艺中的低频偏置功率

    公开(公告)号：US07571698B2

    公开(公告)日：2009-08-11

    申请号：US11034515

    申请日：2005-01-10

    申请人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    发明人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    IPC分类号： C23C16/00 ,  C23C14/00

    CPC分类号： H01J37/321

    摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

    摘要翻译： 衬底处理系统具有限定处理室的壳体。 设置在处理室内的衬底保持器在衬底处理期间支撑衬底。 气体输送系统将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体发生系统在处理室内形成密度大于1011离子/ cm3的等离子体。 射频偏置系统以小于5MHz的频率在衬底上产生电偏压。 控制器控制气体传送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。