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12 条记录 (耗时 0.025 秒)

    Method of manufacturing a dual contact trench capacitor
    2.
    发明授权
    Method of manufacturing a dual contact trench capacitor 有权
    制造双接触沟槽电容器的方法

    公开(公告)号：US07897473B2

    公开(公告)日：2011-03-01

    申请号：US12181335

    申请日：2008-07-29

    申请人： Timothy W. Kemerer ,  Jenifer E. Lary ,  James S. Nakos ,  Steven M. Shank

    发明人： Timothy W. Kemerer ,  Jenifer E. Lary ,  James S. Nakos ,  Steven M. Shank

    IPC分类号： H01L21/20

    CPC分类号： H01L27/0733 ,  H01L21/76229 ,  H01L28/90

    摘要： A method of manufacturing a dual contact trench capacitor is provided. The method includes forming a first plate provided within a trench and isolated from a wafer body by a first insulator layer formed in the trench. The method further includes forming a second plate provided within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.

    摘要翻译： 提供一种制造双接触沟槽电容器的方法。 该方法包括形成设置在沟槽内的第一板，并且通过形成在沟槽中的第一绝缘体层与晶片本体隔离。 该方法还包括形成设置在沟槽内的第二板，并且通过在沟槽中形成的第二绝缘体与晶片本体和第一板隔离。

    METHOD OF MANUFACTURING A DUAL CONTACT TRENCH CAPACITOR.
    7.
    发明申请
    METHOD OF MANUFACTURING A DUAL CONTACT TRENCH CAPACITOR. 有权
    制造双接触电容器的方法。

    公开(公告)号：US20100029055A1

    公开(公告)日：2010-02-04

    申请号：US12181335

    申请日：2008-07-29

    申请人： Timothy W. Kemerer ,  Jenifer E. Lary ,  James S. Nakos ,  Steven M. Shank

    发明人： Timothy W. Kemerer ,  Jenifer E. Lary ,  James S. Nakos ,  Steven M. Shank

    IPC分类号： H01L21/02

    CPC分类号： H01L27/0733 ,  H01L21/76229 ,  H01L28/90

    摘要： A method of manufacturing a dual contact trench capacitor is provided. The method includes forming a first plate provided within a trench and isolated from a wafer body by a first insulator layer formed in the trench. The method further includes forming a second plate provided within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.

    摘要翻译： 提供一种制造双接触沟槽电容器的方法。 该方法包括形成设置在沟槽内的第一板，并且通过形成在沟槽中的第一绝缘体层与晶片本体隔离。 该方法还包括形成设置在沟槽内的第二板，并且通过在沟槽中形成的第二绝缘体与晶片本体和第一板隔离。

    Embedded series deep trench capacitors and methods of manufacture
    9.
    发明授权
    Embedded series deep trench capacitors and methods of manufacture 有权
    嵌入式系列深沟槽电容器及其制造方法

    公开(公告)号：US08441103B2

    公开(公告)日：2013-05-14

    申请号：US13349158

    申请日：2012-01-12

    申请人： Timothy W. Kemerer ,  James S. Nakos ,  Steven M. Shank

    发明人： Timothy W. Kemerer ,  James S. Nakos ,  Steven M. Shank

    IPC分类号： H01L29/00 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L28/91

    摘要： Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insulator layers and a plurality of electrodes in a trench structure, where each electrode is formed in an alternating manner with each insulator layer. The method further includes planarizing the electrodes to form contact regions for a plurality of capacitors.

    摘要翻译： 提供了沟槽电容器和制造沟槽电容器的方法。 沟槽电容器是具有独立电极触点的非常密集的串联电容器结构。 在该方法中，通过在沟槽结构中形成多个绝缘体层和多个电极而形成一系列电容器，其中每个电极与每个绝缘体层交替地形成。 该方法还包括平面化电极以形成多个电容器的接触区域。

    Dual contact trench resistor in shallow trench isolation (STI) and methods of manufacture
    10.
    发明授权
    Dual contact trench resistor in shallow trench isolation (STI) and methods of manufacture 有权
    浅沟槽隔离（STI）中的双接触沟槽电阻和制造方法

    公开(公告)号：US08614137B2

    公开(公告)日：2013-12-24

    申请号：US13025501

    申请日：2011-02-11

    申请人： Timothy W. Kemerer ,  James S. Nakos ,  Steven M. Shank

    发明人： Timothy W. Kemerer ,  James S. Nakos ,  Steven M. Shank

    IPC分类号： H01L21/76 ,  H01L29/86

    CPC分类号： H01L28/20 ,  H01L21/76229 ,  H01L27/1116

    摘要： The invention relates to a semiconductor structures and methods of manufacture and, more particularly, to a dual contact trench resistor in shallow trench isolation (STI) and methods of manufacture. In a first aspect of the invention, a method comprises forming a trench in a substrate; forming a first insulator layer within the trench; forming a first electrode within the trench, on the first insulator layer, and isolated from the substrate by the first insulator layer; forming a second insulator layer within the trench and on the first electrode; and forming a second electrode within the trench, on the second insulator layer, and isolated from the substrate by the first insulator layer and the second insulator layer.

    摘要翻译： 本发明涉及一种半导体结构及其制造方法，更具体地涉及浅沟槽隔离（STI）中的双接触沟槽电阻器及其制造方法。 在本发明的第一方面中，一种方法包括在衬底中形成沟槽; 在所述沟槽内形成第一绝缘体层; 在所述沟槽内形成第一电极，在所述第一绝缘体层上，并通过所述第一绝缘体层与所述衬底隔离; 在所述沟槽内和所述第一电极上形成第二绝缘体层; 以及在所述沟槽内，在所述第二绝缘体层上形成第二电极，并且通过所述第一绝缘体层和所述第二绝缘体层与所述衬底隔离。