公开(公告)号：US11821847B2

公开(公告)日：2023-11-21

申请号：US17380578

申请日：2021-07-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Hsien Chen ,  Chia-Feng Hsiao ,  Chung-Hsuan Wu ,  Chen-Hui Huang ,  Nai-Ying Lo ,  En-Wei Tsui ,  Yung-Yu Yang ,  Chen-Hsuan Hung

IPC: G06T7/00 ,  G01N21/95 ,  G06T7/13

CPC classification number: G01N21/9505 ,  G06T7/0004 ,  G06T7/13 ,  G06T2207/30148

Abstract: A wafer backside defect detection method and a wafer backside defect detection apparatus are provided. The wafer backside defect detection method includes the following steps. A peripheral edge area of a wafer backside image that at least one notch is located is cropped off. Adjacent white pixels on the wafer backside image are connected to obtain a plurality of abnormal regions. If a total area of top N of the abnormal regions is more than 10% of an area of the wafer, it is deemed that the wafer has a roughness defect. N is a natural number. If the total area of the top N of the abnormal regions is less than 1% of the area of the wafer and a largest abnormal region of the abnormal regions is longer than a predetermined length, it is deemed that the wafer has a scratch defect.