公开(公告)号：US20230007939A1

公开(公告)日：2023-01-12

申请号：US17391075

申请日：2021-08-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chuan-Chang WU ,  Zhen WU ,  Hsuan-Hsu CHEN ,  Chun-Lung CHEN

IPC: H01L21/3213 ,  H01L29/66

Abstract: A method for a clean procedure during manufacturing a semiconductor device, includes: providing a patterned sacrificial gate structure including a gate dielectric and a sacrificial layer; wherein the patterned sacrificial gate structure is embedded in a dielectric layer and an upper surface of the sacrificial layer is exposed; performing a first etching process to remove the sacrificial layer; and performing a hydrophilic treatment and a hydrophobic treatment to remove a residue of the sacrificial layer.