公开(公告)号：US09761680B2

公开(公告)日：2017-09-12

申请号：US14923409

申请日：2015-10-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Dongdong Li ,  Ko-Chi Chen ,  Shen-De Wang

IPC: H01L29/788 ,  H01L29/423 ,  H01L27/11534 ,  H01L29/66

CPC classification number: H01L29/42328 ,  H01L27/11534 ,  H01L29/42336 ,  H01L29/66825

Abstract: The present invention provides a semiconductor device, including a substrate with a memory region and a logic region, the substrate having a recess disposed in the memory region, a logic gate stack disposed in the logic region, and a non-volatile memory disposed in the recess. The non-volatile memory includes at least two floating gates and at least two control gates disposed on the floating gates, where each floating gate has a step-shaped bottom, and the step-shaped bottom includes a first bottom surface and a second bottom surface lower than the first bottom surface.