公开(公告)号：US09978795B1

公开(公告)日：2018-05-22

申请号：US15401087

申请日：2017-01-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jy-Hwang Lin ,  Wen-Chieh Wang ,  Tien-Shang Kuo ,  Fu-Hsuan Chu ,  Hua-Wei Peng

IPC: H01L31/00 ,  H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14625 ,  H01L23/562 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14678

Abstract: A semiconductor structure includes a substrate, a plurality of image sensing devices formed in the substrate, at least a passivation layer formed on the substrate, a plurality of first metal patterns formed on the passivation layer, a plurality of gaps formed between the first metal patterns, an insulating layer lining the gaps, and a plurality of light-guiding structures respectively formed in the gaps. The light-guiding structures respectively include an anchor portion and a body portion, and bottom surfaces of the anchor portions being lower than top surfaces of the first metal patterns.