公开(公告)号：US20230307524A1

公开(公告)日：2023-09-28

申请号：US17723438

申请日：2022-04-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsin-Han Wu ,  Kai-Kuen Chang ,  Ping-Hung Chiang

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L29/66674 ,  H01L29/7801

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a first drift region, a gate structure, a first sub gate structure, a first spacer structure, a second spacer structure, and a first insulation structure. The first drift region is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate and separated from the first sub gate structure. The first sub gate structure and the first insulation structure are disposed on the first drift region. The first spacer structure is disposed on a sidewall of the gate structure. The second spacer structure is disposed on a sidewall of the first sub gate structure. At least a part of the first insulation structure is located between the first spacer structure and the second spacer structure. The first insulation structure is directly connected with the first drift region located between the first spacer structure and the second spacer structure.

公开(公告)号：US20240154027A1

公开(公告)日：2024-05-09

申请号：US18413045

申请日：2024-01-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsin-Han Wu ,  Kai-Kuen Chang ,  Ping-Hung Chiang

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L29/66674 ,  H01L29/7801

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a first drift region, a gate structure, a first sub gate structure, a first spacer structure, a second spacer structure, and a first insulation structure. The first drift region is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate and separated from the first sub gate structure. The first sub gate structure and the first insulation structure are disposed on the first drift region. The first spacer structure is disposed on a sidewall of the gate structure. The second spacer structure is disposed on a sidewall of the first sub gate structure. At least a part of the first insulation structure is located between the first spacer structure and the second spacer structure. The first insulation structure is directly connected with the first drift region located between the first spacer structure and the second spacer structure.

公开(公告)号：US11923435B2

公开(公告)日：2024-03-05

申请号：US17723438

申请日：2022-04-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsin-Han Wu ,  Kai-Kuen Chang ,  Ping-Hung Chiang

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L29/66674 ,  H01L29/7801

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a first drift region, a gate structure, a first sub gate structure, a first spacer structure, a second spacer structure, and a first insulation structure. The first drift region is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate and separated from the first sub gate structure. The first sub gate structure and the first insulation structure are disposed on the first drift region. The first spacer structure is disposed on a sidewall of the gate structure. The second spacer structure is disposed on a sidewall of the first sub gate structure. At least a part of the first insulation structure is located between the first spacer structure and the second spacer structure. The first insulation structure is directly connected with the first drift region located between the first spacer structure and the second spacer structure.