公开(公告)号：US10777508B2

公开(公告)日：2020-09-15

申请号：US15347757

申请日：2016-11-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Kai Kang ,  Sheng-Yuan Hsueh ,  Yi-Chung Sheng ,  Kuo-Yu Liao ,  Shu-Hung Yu ,  Hung-Hsu Lin ,  Hsiang-Hung Peng

IPC: H01L23/544 ,  H01L27/092 ,  H01L27/02 ,  G03F9/00 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate including a plurality of chip areas and a scribe line defined thereon, and a mark pattern disposed in the scribe line. The mark pattern includes a plurality of unit cells immediately adjacent to each other, and each unit cell includes a first active region, a second active region isolated from the first active region, a plurality of first gate structures extending along a first direction and arranged along a second direction perpendicular to the first direction, and a plurality of first conductive structures. The first gate structures straddle the first active region and the second active region. The first conductive structures are disposed on the first active region, the second active region, and two opposite sides of the first gate structures.

公开(公告)号：US11296036B2

公开(公告)日：2022-04-05

申请号：US16986270

申请日：2020-08-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Kai Kang ,  Sheng-Yuan Hsueh ,  Yi-Chung Sheng ,  Kuo-Yu Liao ,  Shu-Hung Yu ,  Hung-Hsu Lin ,  Hsiang-Hung Peng

IPC: H01L23/544 ,  H01L27/092 ,  H01L27/02 ,  G03F9/00 ,  H01L21/8238

Abstract: A mark pattern includes unit cells immediately adjacent to each other and arranged in a form of dot matrix to form a register mark or an identification code, wherein each unit cell has configuration identical to functional devices of pMOS and nMOS, and each unit cell includes a first active region, a second active region isolated from the first active region, and first gate structures extending along a first direction and are arranged along a second direction perpendicular to the first direction, and the first gate structures straddling the first active region and the second active region, contact structures disposed between the first gate structures on the first active region and the second active region, and via structures disposed on the contact structures and two opposite ends of the first gate structures.

公开(公告)号：US20180130753A1

公开(公告)日：2018-05-10

申请号：US15347757

申请日：2016-11-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Kai Kang ,  Sheng-Yuan Hsueh ,  Yi-Chung Sheng ,  Kuo-Yu Liao ,  Shu-Hung Yu ,  Hung-Hsu Lin ,  Hsiang-Hung Peng

IPC: H01L23/544 ,  H01L27/092 ,  H01L23/522

Abstract: A semiconductor device includes a substrate including a plurality of chip areas and a scribe line defined thereon, and a mark pattern disposed in the scribe line. The mark pattern includes a plurality of unit cells immediately adjacent to each other, and each unit cell includes a first active region, a second active region isolated from the first active region, a plurality of first gate structures extending along a first direction and arranged along a second direction perpendicular to the first direction, and a plurality of first conductive structures. The first gate structures straddle the first active region and the second active region. The first conductive structures are disposed on the first active region, the second active region, and two opposite sides of the first gate structures.