公开(公告)号：US12147163B2

公开(公告)日：2024-11-19

申请号：US17528295

申请日：2021-11-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsin-Yu Hsieh ,  Kuan-Ying LAi ,  Chang-Mao Wang ,  Chien-Hao Chen ,  Chun-Chi Yu

IPC: G03F7/00

Abstract: A method for correcting critical dimension (CD) measurements of a lithographic tool includes steps as follows. A correction pattern having a first sub-pattern parallel to a first direction and a second sub-pattern parallel to a second direction is provided on a lithographic mask; wherein the first sub-pattern and the second sub-pattern come cross with each other. A first After-Develop-Inspection critical dimension (ADI CD) of a developed pattern formed on a photo-sensitive layer and transferred from the correction pattern is measured using the lithographic tool along a first scanning direction. A second ADI CD of the developed pattern is measured using the lithographic tool along a second scanning direction. The first ADI CD is subtracted from the second ADI CD to obtain a measurement bias value. Exposure conditions and/or measuring parameters of the lithographic tool are adjusted according to the measurement bias value.