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公开(公告)号：US20250107114A1
公开(公告)日：2025-03-27
申请号：US18380641
申请日：2023-10-16
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Pin-Tseng Chen , Ling-Chun Chou , Kun-Hsien Lee
Abstract: The invention provides a metal oxide semiconductor (MOS) capacitor structure, which includes a counter-doping region in the channel region directly below the gate. Between the deep ion well and the counter-doping region is a semiconductor region. The doping concentration of the semiconductor region is lower than that of the deep ion well. The P-type well ion implantation processes in the active region of the device can be omitted, so the production cost is lower, and the dosage of the counter-doping region can be reduced, which improves the time-dependent dielectric collapse (TDDB) issue.
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