公开(公告)号：US20240266286A1

公开(公告)日：2024-08-08

申请号：US18118093

申请日：2023-03-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Wei Huang ,  Po-Hung Chen ,  Chun-Cheng Yu ,  I-Hsien Liu ,  Ho-Yu Lai ,  Kuan-Wen Fang ,  Chih-Sheng Chang

IPC: H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/76892

Abstract: A semiconductor pattern is provided in the present invention, including a first line extending to one end in a first direction and a second line extending in a second direction perpendicular to the first direction and adjacent to the end of the first line in the first direction, wherein the end of the first line is provided with a rounding feature, the first line has a width in the second direction, and the width is gradually increased to a maximum width toward the end and gradually converged to form the rounding feature.