公开(公告)号：US20240395834A1

公开(公告)日：2024-11-28

申请号：US18795147

申请日：2024-08-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhaoyao Zhan ,  Qianwei DING ,  Xiaohong JIANG ,  Ching Hwa TEY

IPC: H01L27/146

Abstract: A photosensitive device includes an integrated circuit structure and a plurality of photodiodes disposed on the integrated circuit structure. The photodiodes respectively includes a first material layer and a second material layer overlapping on the first material layer and extending beyond the first material layer to directly contact a surface of the integrated circuit structure. The first material layer and the second material layer are made of two-dimensional semiconductor materials.