公开(公告)号：US20250142815A1

公开(公告)日：2025-05-01

申请号：US18519092

申请日：2023-11-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chang-Yih Chen ,  Kuo-Hsing Lee ,  Chun-Hsien Lin ,  Wen-Chieh Chang ,  Kun-Szu Tseng ,  Sheng-Yuan Hsueh ,  Yao-Jhan Wang

IPC: H10B20/25

Abstract: A semiconductor device includes a substrate having a medium-voltage (MV) region and an one time programmable (OTP) capacitor region, a MV device on the MV region, and an OTP capacitor on the OTP capacitor region. Preferably, the MV device includes a first gate dielectric layer on the substrate, a first gate electrode on the first gate dielectric layer, and a shallow trench isolation (STI) adjacent to two sides of the first gate electrode. The OTP capacitor includes a fin-shaped structure on the substrate, a doped region in the fin-shaped structure, a second gate dielectric layer on the doped region, and a second gate electrode on the second gate dielectric layer.