公开(公告)号：US20200212052A1

公开(公告)日：2020-07-02

申请号：US16234441

申请日：2018-12-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Chang Lin ,  Wei-Cyuan Lo ,  Yung-Feng Cheng

IPC: H01L27/11

Abstract: The present invention provides a method of designing a layout of a static random access memory (SRAM) pattern, the method includes the following steps: firstly, a target pattern is provided, and according to the target pattern, a plurality of first patterns and a first dummy pattern are formed in a substrate, the first pattern that disposed at the outermost boundary of the first patterns is defined as a first edge pattern, and the first dummy pattern is disposed adjacent to the first edge pattern, next, the first dummy pattern is removed, and afterwards, according to the target pattern, a plurality of second patterns are formed in the substrate, the second patterns comprises a second edge pattern that is disposed between the first edge pattern and an original position of the first dummy pattern.

公开(公告)号：US10797059B2

公开(公告)日：2020-10-06

申请号：US16234441

申请日：2018-12-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Chang Lin ,  Wei-Cyuan Lo ,  Yung-Feng Cheng

IPC: H01L27/11 ,  G06F30/39

Abstract: The present invention provides a method of designing a layout of a static random access memory (SRAM) pattern, the method includes the following steps: firstly, a target pattern is provided, and according to the target pattern, a plurality of first patterns and a first dummy pattern are formed in a substrate, the first pattern that disposed at the outermost boundary of the first patterns is defined as a first edge pattern, and the first dummy pattern is disposed adjacent to the first edge pattern, next, the first dummy pattern is removed, and afterwards, according to the target pattern, a plurality of second patterns are formed in the substrate, the second patterns comprises a second edge pattern that is disposed between the first edge pattern and an original position of the first dummy pattern.