公开(公告)号：US09236429B2

公开(公告)日：2016-01-12

申请号：US14699261

申请日：2015-04-29

Applicant: XINTEC INC.

Inventor： Yu-Lin Yen ,  Sheng-Hao Chiang ,  Hung-Chang Chen ,  Ho-Ku Lan ,  Chen-Mei Fan

IPC: H01L27/14 ,  H01L29/06 ,  H01L21/762

CPC classification number: H01L29/0642 ,  H01L21/76229 ,  H01L27/1463 ,  H01L27/14683

Abstract: A semiconductor structure includes a substrate, a dam element, a first isolation layer, a second isolation layer, and a conductive layer. The substrate has a conductive pad, a trench, a sidewall, a first surface, and a second surface opposite to the first surface. The conductive pad is located on the second surface. The trench has a first opening at the first surface, and has a second opening at the second surface. The dam element is located on the second surface and covers the second opening. The dam element has a concave portion that is at the second opening. The first isolation layer is located on a portion of the sidewall. The second isolation layer is located on the first surface and the sidewall that is not covered by the first isolation layer, such that an interface is formed between the first and second isolation layers.

Abstract translation: 半导体结构包括基板，阻挡元件，第一隔离层，第二隔离层和导电层。 衬底具有导电焊盘，沟槽，侧壁，第一表面和与第一表面相对的第二表面。 导电垫位于第二表面上。 沟槽在第一表面具有第一开口，并且在第二表面具有第二开口。 坝体元件位于第二表面并覆盖第二开口。 坝体元件具有在第二开口处的凹入部分。 第一隔离层位于侧壁的一部分上。 第二隔离层位于不被第一隔离层覆盖的第一表面和侧壁上，使得在第一和第二隔离层之间形成界面。