公开(公告)号：US20200212081A1

公开(公告)日：2020-07-02

申请号：US16653019

申请日：2019-10-15

Applicant: Xiamen Tianma Micro-Electronics Co.,Ltd.

Inventor： Bozhi LIU ,  Xiaoqi SHI ,  Shoujin CAI ,  Xuexin LAN ,  Guozhao CHEN

IPC: H01L27/146 ,  G06K9/00

Abstract: A diode and its fabrication method are provided. The diode includes a substrate, a buffer layer on a side of the substrate, a first film layer, a second film layer and a third film layer. The first film layer is a polycrystalline silicon film layer; the second film layer is an amorphous silicon film layer; and the third film layer is one of the polycrystalline silicon film layer and the amorphous silicon film layer. The diode at least includes a first portion, a second portion, a third portion, a first electrode, and a second electrode. The first portion is located in the first film layer; the second portion is located in the second film layer; and the third portion is located in the third film layer. The first electrode is electrically connected to the first portion, and the second electrode is electrically connected to the third portion.