公开(公告)号：US20080096305A1

公开(公告)日：2008-04-24

申请号：US11874352

申请日：2007-10-18

申请人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

发明人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

IPC分类号： H01L21/00

CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/545 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

摘要翻译： 通过等离子体增强CVD在移动基板上形成含有微晶硅的沉积膜的方法包括通过等离子体增强CVD在移动的衬底上形成含有微晶硅的沉积膜，使得当厚度为300nm的沉积膜 以上，在基板处于静止状态的同时，在基板上形成有由析出膜中的结晶物质引起的拉曼散射强度的微晶硅区域的面积等于或高于 归因于非晶体的拉曼散射基于微晶硅区域的面积和由无定形构成的区域的面积为总面积的50％以上。

公开(公告)号：US07501305B2

公开(公告)日：2009-03-10

申请号：US11874352

申请日：2007-10-18

申请人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

发明人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

IPC分类号： H01L21/20

CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/545 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

摘要翻译： 通过等离子体增强CVD在移动基板上形成含有微晶硅的沉积膜的方法包括通过等离子体增强CVD在移动的衬底上形成含有微晶硅的沉积膜，使得当厚度为300nm的沉积膜 以上，在基板处于静止状态的同时，在基板上形成有由析出膜中的结晶物质引起的拉曼散射强度的微晶硅区域的面积等于或高于 归因于非晶体的拉曼散射基于微晶硅区域的面积和由无定形构成的区域的面积为总面积的50％以上。

公开(公告)号：US5676765A

公开(公告)日：1997-10-14

申请号：US411225

申请日：1995-03-27

申请人： Keishi Saito ,  Koichi Matsuda ,  Hiroshi Shimoda ,  Yusuke Miyamoto

发明人： Keishi Saito ,  Koichi Matsuda ,  Hiroshi Shimoda ,  Yusuke Miyamoto

IPC分类号： H01L21/205 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/056 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element comprising a substrate and a multi-layered semiconductor active layer having a pin junction structure disposed on said substrate, said multi-layered semiconductor layer comprising a non-single crystal semiconductor layer of n- or p-type, a non-single crystal i-type semiconductor layer and a non-single crystal semiconductor layer of p- or n-type being stacked in this order from the substrate side, characterized in that said i-type semiconductor layer comprises a three-layered structure comprising a non-single crystal layer (b) formed by means of a microwave plasma CVD process interposed between a pair of non-single crystal layers (a) and (c) each formed by means of a RF plasma CVD process, and said i-type layer (b) is a non-single crystal i-type layer formed by means of the microwave plasma process from a mixture of a silane series gas not containing chlorine atom(s), a chlorine-containing raw material gas in an amount of 10% or less of the total amount of the chlorine-free silane series gas and the chlorine-containing raw material gas, and hydrogen gas.

摘要翻译： 一种光电元件，包括基板和具有设置在所述基板上的pin结结构的多层半导体有源层，所述多层半导体层包括n型或p型非单晶半导体层，非单晶半导体层 晶体i型半导体层和从衬底侧依次堆叠的p型或n型非单晶半导体层，其特征在于，所述i型半导体层包括三层结构， 通过介于通过RF等离子体CVD工艺形成的一对非单晶层（a）和（c）之间的微波等离子体CVD工艺形成的单晶层（b）和所述i型层（ b）是通过微波等离子体工艺形成的非单晶i型层，其由不含氯原子的硅烷系气体，10％的含氯原料气体的混合物或 少于总量的chl 无水硅烷系列气体和含氯原料气体，以及氢气。

公开(公告)号：US06812499B2

公开(公告)日：2004-11-02

申请号：US09982845

申请日：2001-10-22

申请人： Takaharu Kondo ,  Makoto Higashikawa ,  Masafumi Sano ,  Koichi Matsuda

发明人： Takaharu Kondo ,  Makoto Higashikawa ,  Masafumi Sano ,  Koichi Matsuda

IPC分类号： H01L3300

CPC分类号： H01L31/075 ,  H01L31/03682 ,  H01L31/03767 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A silicon based film is provided which comprises a crystal phase formed on a substrate with a surface shape represented by a function f, wherein the silicon-based film is formed on a substrate with a surface shape having a standard deviation of an inclination arctan (df/dx) from 15° to 55° within the range of a sampling length dx from 20 nm to 100 nm. Raman scattering strength resulting from an amorphous component in the silicon-based film is not more than a Raman scattering strength resulting from a crystalline component. A difference between a spacing in a direction parallel to a principal surface of the substrate and a spacing of a single crystal silicon is within the range of 0.2% to 1.0% with regard to the spacing of the single crystal silicon.

摘要翻译： 提供了一种硅基膜，其包括形成在具有由功能f表示的表面形状的基板上的晶相，其中所述硅基膜形成在具有倾斜度的标准偏差（df）的表面形状的基板上 / dx）在20nm至100nm的采样长度dx的范围内从15°至55°。 由硅基膜中的无定形成分产生的拉曼散射强度不大于由结晶成分产生的拉曼散射强度。 相对于单晶硅的间隔，平行于基板的主面的方向的间隔和单晶硅的间隔之间的差在0.2％〜1.0％的范围内。

公开(公告)号：US06609147B1

公开(公告)日：2003-08-19

申请号：US09227689

申请日：1999-01-08

申请人： Koichi Matsuda ,  Taketo Naito ,  Hiroshi Ueno

发明人： Koichi Matsuda ,  Taketo Naito ,  Hiroshi Ueno

IPC分类号： G06F1516

CPC分类号： H04L12/1813 ,  A63F13/12 ,  A63F13/87 ,  A63F2300/50 ,  A63F2300/572 ,  H04L12/1827 ,  H04L67/38

摘要： Communication between users not accessing a shared virtual reality space at the same time is realized. A client terminal sends a calling card and a mail. A hard disk drive of a mail server holds the calling card and the mail. When a user to whom the calling card and the mail are to be sent accesses the shared virtual reality space, the mail server transfers the calling card and the mail to the client terminal.

摘要翻译： 同时实现不访问共享虚拟现实空间的用户之间的通信。 客户终端发送电话卡和邮件。 邮件服务器的硬盘驱动器保存电话卡和邮件。 当要向其发送呼叫卡和邮件的用户访问共享虚拟现实空间时，邮件服务器将呼叫卡和邮件传送到客户终端。

公开(公告)号：US06346956B2

公开(公告)日：2002-02-12

申请号：US08939152

申请日：1997-09-29

申请人： Koichi Matsuda

发明人： Koichi Matsuda

IPC分类号： G06F1300

CPC分类号： G06F17/30994

摘要： To allow the user who wants to use three-dimensional virtual reality spaces to easily select a desired three-dimensional virtual reality space. When the browser is started with data about a three-dimensional virtual reality space stored in a predetermined directory, this predetermined directory is searched. According to the search result, an entry room in which three-dimensional icons representing three-dimensional virtual reality spaces are arranged is generated and displayed. The three-dimensional icons arranged in the entry room are linked to the data of the corresponding three-dimensional virtual reality spaces. When user clicks on a desired three-dimensional icon, the corresponding three-dimensional virtual reality space is displayed.

摘要翻译： 为了允许想要使用三维虚拟现实空间的用户容易地选择所需的三维虚拟现实空间。 当浏览器从存储在预定目录中的三维虚拟现实空间的数据开始时，搜索该预定目录。 根据搜索结果，生成并显示表示三维虚拟现实空间的三维图标的入口室。 安排在入口室中的三维图标与相应的三维虚拟现实空间的数据相关联。 当用户点击所需的三维图标时，显示相应的三维虚拟现实空间。

公开(公告)号：US06331672B1

公开(公告)日：2001-12-18

申请号：US08807590

申请日：1997-02-27

申请人： Koichi Matsuda ,  Jinsho Matsuyama

发明人： Koichi Matsuda ,  Jinsho Matsuyama

IPC分类号： H01L3100

CPC分类号： H01L31/0236 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/02366 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic cell comprising a substrate, a back reflector, a transparent conductive layer, and a photoelectric conversion layer, wherein the transparent conductive layer has holes on the surface, is provided. Additionally, a photovoltaic cell comprising a substrate, a back reflector, a transparent conductive layer, and a photoelectric conversion layer, wherein diffuse reflectance of the back reflector is 3 to 50%, is provided. According to the above-described structures, processability, yield and reliability of the photovoltaic cell can be improved, while photoelectric conversion efficiency is maintained at a high level due to back-surface diffuse reflection.

摘要翻译： 提供了一种包括基板，后反射器，透明导电层和光电转换层的光电池，其中透明导电层在表面上具有孔。 此外，提供了包括基板，后反射器，透明导电层和光电转换层的光伏电池，其中后反射器的漫反射率为3至50％。 根据上述结构，可以提高光伏电池的加工性，成品率和可靠性，同时由于背面漫反射，光电转换效率保持在高水平。

公开(公告)号：US06184456B2

公开(公告)日：2001-02-06

申请号：US08985312

申请日：1997-12-04

申请人： Jinsho Matsuyama ,  Koichi Matsuda

发明人： Jinsho Matsuyama ,  Koichi Matsuda

IPC分类号： H01L3100

CPC分类号： H01L31/0368 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic device of the present invention has a non-single-crystal semiconductor. A layer underlying the non-single-crystal semiconductor has a polycrystalline structure. Individual grains of the polycrystal exposed in the surface of the underlying layer have smooth surfaces. The surface of the underlying layer has a step along the grain boundaries of the polycrystal, or a protrusion or recess at the grain boundaries. Alternatively, polycrystal grains having rough surfaces and polycrystal grains having smooth surfaces commonly exist in the surface of the polycrystalline layer. The polycrystalline layer may be a substrate of the photovoltaic device. The present invention, by virtue of the use of such a polycrystalline layer, provides a highly reliable and efficient thin-film photovoltaic device which enhances light absorption by the semiconductor layer and which can be produced at a high yield even at a practically adoptable low cost, while eliminating deficiencies of known arts in regard to workability, yield and durability.

摘要翻译： 本发明的光电器件具有非单晶半导体。 非单晶半导体的下面的层具有多晶结构。 暴露在下层的表面的多晶体的单个晶粒具有平滑的表面。 下层的表面沿着多晶体的晶界或在晶界处的突起或凹陷具有台阶。 或者，具有粗糙表面的多晶粒和具有平滑表面的多晶粒通常存在于多晶层的表面中。 多晶层可以是光伏器件的衬底。 本发明通过使用这种多晶层，提供了高度可靠且高效的薄膜光伏器件，其增强了半导体层的光吸收，并且即使在实际可采用的低成本下也可以以高产率生产 同时消除已知艺术在可加工性，产量和耐久性方面的缺陷。

公开(公告)号：US5637358A

公开(公告)日：1997-06-10

申请号：US376652

申请日：1995-01-20

申请人： Hirokazu Otoshi ,  Keishi Saitoh ,  Ryuji Okamura ,  Koichi Matsuda

发明人： Hirokazu Otoshi ,  Keishi Saitoh ,  Ryuji Okamura ,  Koichi Matsuda

IPC分类号： C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/511 ,  H01J37/32238 ,  H01J37/32495

摘要： In a microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a substrate which comprises a substantially enclosed film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a discharge space for causing plasma discharge of resulting in forming a deposited film on a substrate, said substrate being positioned on a substrate holder arranged in said film-forming chamber and said film-forming chamber being provided with means for supplying a film-forming raw material gas into said discharge space and means for evacuating said film-forming chamber, the improvement which comprises a dielectric sheet being movably placed on the surface of said microwave introducing window situated in said film-forming chamber in a state that said dielectric sheet is face to face contacted with said surface of the microwave introducing window.

摘要翻译： 在用于在基板上形成功能沉积膜的微波等离子体化学气相沉积设备中，该微波等离子体化学气相沉积设备包括一个基本上封闭的成膜室，该室具有一个圆周壁，该圆周壁的端部气密地设置有一个微波引入窗口， 电源连接，所述成膜室具有用于引起等离子体放电的放电空间，导致在基板上形成沉积膜，所述基板位于布置在所述成膜室中的基板保持器和所述成膜室 设置有用于将成膜原料气体供应到所述放电空间的装置和用于抽出所述成膜室的装置，其改进包括可移动地放置在位于所述膜形成室中的所述微波引入窗口的表面上的电介质片， 形成室，其处于所述电介质片面对面的状态 与微波引入窗口的所述表面发生反应。

公开(公告)号：US5439533A

公开(公告)日：1995-08-08

申请号：US337195

申请日：1994-11-07

申请人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

发明人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： An object of the present invention is to provide a photovoltaic device and a method of producing the photovoltaic device which can prevent recombination of photo-excited carriers and which permits increases in the open circuit voltage and the carrier range. The photovoltaic device of the present invention has a laminate structure composed of at least a p-type layer of a silicon non-single crystal semiconductor, a photoactive layer having a plurality of i-type layers, and an n-type layer. The photoactive layer has a laminate structure composed of a first i-type layer deposited on the side of the n-type layer by a microwave plasma CVD process, and a second i-type layer deposited on the side of said the p-type layer by an RF plasma CVD process. The first i-type layer deposited by the microwave plasma CVD process contains at least silicon and carbon atoms, and has a minimum band gap between the center thereof and the p-type layer, and the second i-type layer deposited by the RF plasma CVD process contains at least silicon atoms and has a thickness of 30 nm or less.

摘要翻译： 本发明的目的是提供一种能够防止光激发载流子复合并且允许开路电压和载流子范围增加的光电器件及其制造方法。 本发明的光电器件具有至少由非硅单晶半导体的p型层，具有多个i型层的光活性层和n型层构成的层叠结构。 光敏层具有由微波等离子体CVD工艺在n型层侧沉积的第一i型层和沉积在所述p型层侧的第二i型层构成的层叠结构 通过RF等离子体CVD工艺。 通过微波等离子体CVD法沉积的第一i型层至少包含硅和碳原子，并且在其中心和p型层之间具有最小的带隙，并且由RF等离子体沉积的第二i型层 CVD工艺至少含有硅原子，其厚度为30nm以下。