公开(公告)号：US5206524A

公开(公告)日：1993-04-27

申请号：US721913

申请日：1991-06-20

申请人： Young-Kai Chen ,  Anthony F. J. Levi ,  Richard N. Nottenburg ,  Morton Panish

发明人： Young-Kai Chen ,  Anthony F. J. Levi ,  Richard N. Nottenburg ,  Morton Panish

IPC分类号： H01L29/08 ,  H01L29/205 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L29/0895 ,  H01L29/205

摘要： Improved heterojunction bipolar transistor (HBT) are disclosed. Inventive devices can attain high cut-off frequency (f.sub.T), exemplarily 80 GHz or higher, and high DC current gain (.beta.), exemplarily 25 or higher. The devices exhibit lateral scaling, permitting reduction in emitter stripe width without unacceptable decrease in .beta.. Exemplarily the stripe width is 1 .mu.m or less. The inventive HBTs are hot electron devices, with the hot electrons in the base region being spatially confined such that relatively few electrons reach the surface of the extrinsic base region. The relatively low bulk and surface recombination rate in the base of inventive HBTs is an important aspect of the invention and makes possible devices having relatively high .beta. and low power consumption. Appropriate choice of base material, namely, a semiconductor material having relatively low intrinsic surface recombination velocity, can result in further reduction of surface recombination, as can, for instance, the use of an appropriate non-alloyed metal base contact. Appropriate choice of collector material can result in improved ballistic transport through the collector depletion region, and novel selection criteria are disclosed. InP, InAs, and In.sub.0.53 Ga.sub.0.47 As are exemplary materials that meet these criteria. Use of a highly doped collector contact region, with dopant level within a relatively narrow concentration range, can also lead to improved device behavior, as can the use of a compound emitter that comprises one or more appropriately placed thin undoped heteroepitaxial layers.

摘要翻译： 公开了改进的异质结双极晶体管（HBT）。 本发明的器件可以获得例如80GHz或更高的高截止频率（fT）和高直流电流增益（β），示例性地为25或更高。 这些器件表现出横向缩放，允许发射极条宽度的减小，而β不会有不可接受的降低。 条纹宽度为1μm以下。 本发明的HBT是热电子器件，其中基极区中的热电子被空间限制，使得相对少的电子到达外部基极区域的表面。 本发明HBT的基底中相对较低的体积和表面复合速率是本发明的重要方面，并使得可能的器件具有相对较高的β和低功耗。 基本材料的适当选择，即具有相对低的固有表面复合速度的半导体材料可以导致表面复合的进一步减少，例如可以使用合适的非合金金属基底接触。 收集器材料的适当选择可以导致通过集电极耗尽区的改进的弹道输送，并且公开了新的选择标准。 InP，InAs和In0.53Ga0.47A是满足这些标准的示例性材料。 使用具有相对窄的浓度范围内的掺杂剂水平的高度掺杂的集电极接触区域也可以导致改进的器件特性，使用包括一个或多个适当放置的未掺杂异质外延层的复合发射极也是如此。