摘要:
Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory
摘要:
A spin chuck according to the present invention is provided and is configured to eliminate the wrap of chemical over the wafer edge. The dual speed wafer spin chuck apparatus acts to prevent liquids from affecting the backside of a wafer during processing. An outer ring is placed around the wafer with a narrow gap between the two such that drops of liquid on the surface of the wafer will touch the outer ring as they move to the outermost edge of the wafer. By spinning this outer ring at high speed, centrifugal force causes these drops to be pulled off of the wafer and flung radially outward, thus preventing the liquid from affecting the backside of the wafer,
摘要:
One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.
摘要:
A conveyor assembly suitable for use in a substrate processing system includes: at least one substrate carrier having a substrate-carrying surface configured to support at least one substrate; a processing track; a return track; a drive system configured to drive the substrate carrier along the processing track and the return track; and at least one swivel unit configured to pivot the substrate carrier around a substantially horizontal axis from a first orientation into a second orientation, and/or vice versa. Also provided is a method for conveying a substrate carrier including: providing a substrate carrier; positioning the substrate carrier in a first orientation; conveying the substrate carrier along a first track; and rotating the substrate carrier around a substantially horizontal axis into a second orientation.
摘要:
A susceptor for supporting wafers during an chemical vapor deposition process. The susceptor has recesses and orifices disposed in the recesses extending to a central passage of the susceptor. The susceptor has exhaust openings disposed in the top of the susceptor to allow gas from the central passage of the susceptor to exit out the openings. A baffle plate covers the exhaust openings and a vertical space is created between the baffle plate and the top of the susceptor to allow gas to exit from the central passage to outside the susceptor. The bottom of the susceptor also has exhaust openings disposed therein. These openings allow gas from the central passage to exit the susceptor.
摘要:
Ion-assisted plasma enhanced deposition of diamond-like carbon (DLC) films on the surface of photovoltaic solar cells is accomplished with a method and apparatus for controlling ion energy. The quality of DLC layers is fine-tuned by a properly biased system of special electrodes and by exact control of the feed gas mixture compositions. Uniform (with degree of non-uniformity of optical parameters less than 5%) large area (more than 110 cm2) DLC films with optical parameters varied within the given range and with stability against harmful effects of the environment are achieved.
摘要:
A susceptor (1) for epitaxial growth reactors comprises a body (2) having a lower base (3), an upper top (4) and some substantially flat side faces (5); the side faces are adapted to receive, in predetermined areas (6), substrates on which the epitaxial growth develops; body (2) is provided with edge side regions (7) defined by couples of adjacent side faces (5); along edge side regions (7) in the upper part of body (2) there are provided first ribs (8) adapted to control the flow of reaction gases along side faces (5); along edge side regions (7) in the lower part of body (2) there are provided second ribs (9) adapted to control the flow of reaction gases along side faces (5).
摘要:
The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each partition being provided with a wafer mounting concave portion 6a, 6b, 6c on which a wafer is laid, and the inclination angle θa, θb, θc of a bottom face 6a1, 6b1, 6c1 of the concave portion for each partition to the vertical line is gradually decreased in each partition from the upper part to the lower part.
摘要:
An exemplary platform assembly and method is provided to facilitate a uniform deposition of a depositant on substrates. The platform assembly can include a platform, satellite tables, and an actuator. The platform moves upon a support structure, while the satellite tables, supporting the substrates, rotate on the platform. The actuator moves the platform and satellite tables, presenting the substrate to the depositant dispenser. A resistance to movement of the platform forces a rotation of the satellite tables. Additionally, a method is provided that includes positioning a platform on a support structure and positioning the substrates on the satellite tables. The platform is then moved within a dispersion area of the depositant dispenser. A stationary gear, coupled to the support structure, resists motion of the platform, thereby forcing each of the plurality of satellite tables to rotate.
摘要:
An epitaxial growth furnace is provided for effecting the formation of an epitaxial layer on the surface of a semiconductor wafer by CVD in a reaction chamber of the furnace. The furnace comprises a wafer holder having an opening for exposing a surface area of the wafer which is subject to epitaxial growth, an opening flange adapted for engagement with a chamfered tapered face of a whole peripheral edge of the wafer on the side of said surface area thereof, and a plurality of jaws for detachably engaging with an outer periphery of the wafer on a back surface side of said surface area.