公开(公告)号：US06849520B2

公开(公告)日：2005-02-01

申请号：US10685518

申请日：2003-10-16

Applicant: Chul-Sung Kim ,  Si-Young Choi ,  Jung-Woo Park ,  Jong-Ryol Ryu ,  Byeong-Chan Lee

Inventor： Chul-Sung Kim ,  Si-Young Choi ,  Jung-Woo Park ,  Jong-Ryol Ryu ,  Byeong-Chan Lee

IPC: H01L21/76 ,  H01L21/762

CPC classification number: H01L21/76224

Abstract: A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.

Abstract translation: 半导体器件中的沟槽隔离及其制造方法包括：在硅衬底中形成具有用于器件隔离的内侧壁的沟槽; 在形成沟槽的内侧壁的硅衬底的表面上形成氧化物层; 向硅衬底提供愈合元件以去除悬挂键; 并用器件隔离层填充沟槽，从而形成沟槽隔离，而不产生悬挂键导致电荷陷阱。