公开(公告)号：US5677264A

公开(公告)日：1997-10-14

申请号：US693673

申请日：1996-08-13

申请人： Jeong-Dae Suh ,  Gun-Yong Sung

发明人： Jeong-Dae Suh ,  Gun-Yong Sung

IPC分类号： H01L39/22 ,  H01L27/18 ,  H01L39/24

CPC分类号： H01L39/2496 ,  Y10S505/702

摘要： The present invention discloses a process for forming an a-axis superconducting junction by adjusting the deposition temperature of an oxide normal conductor layer/and oxide superconductor layer/an oxide insulating layer/an oxide normal conductor layer/and an oxide superconductor layer, which are sequentially multilayered on an oxide single crystalline substrate. According to the present invention, the oxide superconductor layer and the oxide insulating layer have an a-axis oriented perpendicularly, and the oxide normal conductor layer have a b-axis oriented perpendicularly, so that a superconductor Josephson junction may be obtained.

摘要翻译： 本发明公开了一种通过调节氧化物正常导体层/氧化物超导体层/氧化物绝缘层/氧化物正常导体层/氧化物超导体层的沉积温度来形成a轴超导结的方法， 顺序地多层在氧化物单晶衬底上。 根据本发明，氧化物超导体层和氧化物绝缘层具有垂直取向的a轴，并且氧化物正常导体层具有垂直取向的b轴，从而可以获得超导体约瑟夫逊结。

公开(公告)号：US5663081A

公开(公告)日：1997-09-02

申请号：US352045

申请日：1994-11-30

申请人： Gun-Yong Sung ,  Jeong-Dae Suh

发明人： Gun-Yong Sung ,  Jeong-Dae Suh

IPC分类号： H01L39/22 ,  H01L39/02 ,  H01L39/14 ,  H01L39/24 ,  H01B12/00

CPC分类号： H01L39/146 ,  Y10S505/701

摘要： Disclosed is a method for making a high-temperature super-conducting field-effect transistor with a thick super-conducting channel, the method comprising the steps of depositing a template layer on an oxide crystal substrate by using a pulse laser depositing apparatus; forming a YBa.sub.2 Cu.sub.3 O.sub.7-x layer on the template layer; patterning the YBa.sub.2 Cu.sub.3 O.sub.7-x layer to form a patterned YBa.sub.2 Cu.sub.3 O.sub.7-x layer having an opening and expose a surface portion of the template layer; depositing a YBa.sub.2 Cu.sub.3 O.sub.7-x channel layer on the surface portion of the template layer and over the patterned YBa.sub.2 Cu.sub.3 O.sub.7-x layer, the channel layer having a thickness of from 60 to 100 nm; sequentially forming an SrTiO.sub.3 protective layer and an SrTiO.sub.3 insulating layer on the channel layer; dry-etching back portions of the insulating and protective layers using an etching mask so as to expose surface portions of the channel layer; and forming source/drain electrodes on both the surface portions of the channel layer and at the same time forming a gate electrode on the insulating layer in the opening. In the superconducting FET, the channel layer is formed from 60 to 100 nm in thickness between the substrate and the SrTiO.sub.3 layers. Even through the channel layer is affected by the stress-strain up to approximately 25 nm in depth from each surfaces thereof, since total depth of surface regions of the channel layer affected thus is about 50 nm, the channel layer has a super-conducting center region of from 10 to 50 nm in thickness in which a strain is completely eliminated.

摘要翻译： 公开了一种制造具有厚超导通道的高温超导场效应晶体管的方法，所述方法包括以下步骤：通过使用脉冲激光沉积设备在氧化物晶体衬底上沉积模板层; 在模板层上形成YBa2Cu3O7-x层; 图案化YBa2Cu3O7-x层以形成具有开口并且暴露模板层的表面部分的图案化的YBa2Cu3O7-x层; 在模板层的表面部分和图案化的YBa2Cu3O7-x层上沉积YBa2Cu3O7-x沟道层，沟道层的厚度为60〜100nm; 在沟道层上依次形成SrTiO3保护层和SrTiO3绝缘层; 使用蚀刻掩模对绝缘和保护层的后蚀刻部分进行干蚀刻，以暴露沟道层的表面部分; 以及在沟道层的两个表面部分上形成源/漏电极，同时在开口中的绝缘层上形成栅电极。 在超导FET中，在衬底和SrTiO 3层之间的沟道层的厚度为60〜100nm。 即使通过沟道层也受到其每个表面深度约25nm的应力应变的影响，因此受影响的沟道层的表面区域的总深度约为50nm，沟道层具有超导中心 其中应变完全消除的厚度为10至50nm的区域。