摘要:
A sputtering target of a single crystal aluminum alloy which has a uniform concentration distribution of an added metal element and a controlled crystal orientation is prepared using a continuous casting apparatus equipped with a starting rod by solidifying a melt of aluminum having a purity of at least 99.9 wt. % which contains 0.1 to 3.0 wt. % of at least one metal element selected from the group consisting of elements having atomic numbers of 3 to 83, at a casting temperature of 670 to 850.degree. C. at a casting rate of 1 to 80 mm/min. in one direction with maintaining an angle between a center axis of a continuous casting mold and a direction of pulling a casting material at 2 degrees or less.
摘要:
A sputtering target of a single crystal aluminum alloy which has a uniform concentration distribution of an added metal element and a controlled crystal orientation is prepared using a continuous casting apparatus equipped with a starting rod by solidifying a melt of aluminum having a purity of at least 99.9 wt. % which contains 0.1 to 3.0 wt. % of at least one metal element selected from the group consisting of elements having atomic numbers of 3 to 83, at a casting temperature of 670 to 850.degree. C. at a casting rate of 1 to 80 m/min. in one direction with maintaining an angle between a center axis of a continuous casting mold and a direction of pulling a casting material at 2 degrees or less.