Sputtering target of single crystal aluminum alloy
    92.
    发明授权
    Sputtering target of single crystal aluminum alloy 失效
    单晶铝合金溅射靶

    公开(公告)号:US5906717A

    公开(公告)日:1999-05-25

    申请号:US792750

    申请日:1997-02-04

    摘要: A sputtering target of a single crystal aluminum alloy which has a uniform concentration distribution of an added metal element and a controlled crystal orientation is prepared using a continuous casting apparatus equipped with a starting rod by solidifying a melt of aluminum having a purity of at least 99.9 wt. % which contains 0.1 to 3.0 wt. % of at least one metal element selected from the group consisting of elements having atomic numbers of 3 to 83, at a casting temperature of 670 to 850.degree. C. at a casting rate of 1 to 80 m/min. in one direction with maintaining an angle between a center axis of a continuous casting mold and a direction of pulling a casting material at 2 degrees or less.

    摘要翻译: 使用具有起始棒的连续铸造装置,通过固化纯度至少为99.9的铝熔体制备具有均匀的金属元素浓度分布和受控晶体取向的单晶铝合金的溅射靶 重量 %,其含有0.1〜3.0重量% %的至少一种选自原子序数为3〜83的元素的金属元素,铸造温度为670〜850℃,铸造速度为1〜80m / min。 在一个方向上保持连续铸造模具的中心轴线与2度或更小的铸造材料的拉动方向之间的角度。