摘要:
An end mill including multiple spiral flutes in a helical shape around an axis that are formed in a periphery of the top portion of an end mill body which rotates on the axis. Cutting edges are formed at peripheral side ridge portions of wall surfaces of the flutes facing a front side in an end mill rotating direction. Honing is applied along each peripheral cutting edge such that the cutting edge has a variable honing width in the direction of the axis.
摘要:
In order to enable an evaluation of systematic defects, a method of evaluating systematic defects was configured so as to sample a circuit pattern of a specific layer of a semiconductor device, evaluate the state of superimposition between the sampled circuit pattern and circuit patterns of layers other than the specific layer, using design data, classify the state of superimposition, calculate the ratio thereof as a reference ratio, evaluate the state of superimposition between a pattern in design data corresponding to a defect of the specific layer detected by another inspection apparatus and patterns at positions corresponding to the defects in layers other than the specific layer, classify the evaluated state of superimposition, calculate the ratio of the classification as inspection-result ratio, compare the calculated reference ratio and the calculated inspection-result ratio, and evaluate systematic defects by the comparison between the calculated reference ratio and the calculated inspection-result ratio.
摘要:
Provided is an optical disk reproduction apparatus capable of preventing information that is different from the original sub information from being subjected to error correction erroneously, and of stably reproducing the sub information. The optical disk reproduction apparatus (1) has an optical head (301) for reading a reproduction signal including main information and sub information based on a recording mark formed on an optical disk (300), a main information extraction unit (4) for extracting the main information from the reproduction signal, and a sub information extraction unit (2) for extracting the sub information from the reproduction signal. The sub information extraction unit (2) determines a reproduction accuracy of the sub information, and includes an error correction control unit (308) for deciding a timing of performing error correction of the sub information according to the determined reproduction accuracy, and an error correction unit (309) for performing the error correction of the sub information according to the timing decided with the error correction control unit (308).
摘要:
A pattern data examination method and system capable of accurately and speedily examining a circuit pattern without failing to extract pattern contour data are provided. While pattern comparison is ordinarily made by using a secondary electron image, a contour of a pattern element is extracted by using a backscattered electron image said to be suitable for observation and examination of a three dimensional configuration of a pattern element, and pattern inspection is executed by using the extracted contour of the pattern element. More specifically, pattern inspection is executed by comparing a contour of a pattern element with design data such as CAD data to measure a difference between the contour and the data, and by computing, for example, the size of the circuit pattern element from the contour of a pattern. From two or more backscattered electron images formed by detecting backscattered electrons at two or more different spatial positions, pattern contour data contained in the backscattered electron images may be obtained.
摘要:
The present invention relates to semiconductor inspection and provides a technology capable of efficiently detecting a systematic defect. In the present system, with regard to the process (S7, S8) of matching hot spot (HS) points that can be simulated in advance and defect points obtained as a result of a visual inspection each other and the unmatched defect points, a process (S6, S9) of classifying the defect points into groups based on similarity of pattern layout at the defect points to determine the defects belonging to a pattern layout where defects frequently occur, thereby reliably detecting the systematic defect. Also, with a process (S11) of acquiring an uneven distribution in a defect occurrence distribution on a wafer, the systematic defect occurring due to topography of the wafer can also be detected.
摘要:
Provided are an optical disc recording device and a recording signal generating device which enable to correct displacement between a reproducing position of a reproduction signal from a concave-convex mark preformed in an optical disc, and a recording position of second information to be recorded in synchronism with the reproduction signal, and stably and speedily record the second information. A digital signal processor (202) specifies a reproducing position in the concave-convex mark, using a reproduction signal and a channel clock. A recording signal generator (211) generates a recording signal alternately including a plurality of additionally recordable data, each of which includes second information and has a predetermined length, and a plurality of dummy data. A recording position controller (110) detects a recording position displacement amount representing a displacement amount between the reproducing position and a recording position of the additionally recordable data, using the reproducing position and the reading signal. A recording length adjustor (208) increases or decreases the recording length of dummy data in accordance with the recording position displacement amount.
摘要:
Arrangements for inspecting a specimen on which plural patterns are formed; capturing a first image of a first area; capturing a second image of a second area in which patterns which are essentially the same with the patterns formed in the first area; creating data relating to corresponding pixels of the first and second images, for each pixel; determining a threshold for each pixel for detecting defects directly in accordance with the first and second images; and detecting defects on the specimen by processing the first and second images by using the threshold for each pixel and information of a scattered diagram of brightness of the first and second images, wherein the threshold is determined by using information of brightness of a local region of at least one of the first and second images, with the local region including an aimed pixel and peripheral pixels of the aimed pixel.
摘要:
To provide an optical disk device, an optical disk control method and an integrated circuit, which are capable of writing a recordable mark by changing the reflectance ratio of a reflective film formed on concave-convex pits without using an industrial special device or a high-power laser light source. A data reproduction controller (103) sets a first rotation speed in a disk rotation speed switching unit (108) and a first laser power in a laser power switching unit (107) when reproducing the concave-convex pits. When writing the recordable mark, a mark recording controller (104) sets in the disk rotation speed switching unit (108) a second rotation speed that is slower than the first rotation speed and the lowest rotation speed at which the concave-convex pits can be reproduced, and sets a second laser power greater than the first laser power in the laser power switching unit (107) in accordance with the emission timing.
摘要:
Arrangements for inspecting a specimen on which plural patterns are formed; capturing a first image of a first area; capturing a second image of a second area in which patterns which are essentially the same with the patterns formed in the first area; creating data relating to corresponding pixels of the first and second images, for each pixel; determining a threshold for each pixel for detecting defects directly in accordance with the first and second images; and detecting defects on the specimen by processing the first and second images by using the threshold for each pixel and information of a scattered diagram of brightness of the first and second images, wherein the threshold is determined by using information of brightness of a local region of at least one of the first and second images, with the local region including an aimed pixel and peripheral pixels of the aimed pixel.
摘要:
In a process for manufacturing a semiconductor wafer, defect distribution state analysis is performed so as to facilitate identification of the defect cause including a device cause and a process cause by classifying the defect distribution state according to the defect position coordinates detected by the inspection device, into one of the distribution characteristic categories: repeated defects, clustered defects, arc-shaped regional defects, radial regional defects, line type regional defects, ring and blob type regional defects, and random defects.