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108 条记录 (耗时 0.043 秒)

    Semiconductor laser device
    91.
    发明申请
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US20070153854A1

    公开(公告)日：2007-07-05

    申请号：US11704348

    申请日：2007-02-09

    申请人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

    发明人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20

    摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2

    摘要翻译： 一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n 的衬底上，折射率n

    Optical device and optical sensor
    95.
    发明授权
    Optical device and optical sensor 失效
    光学设备和光学传感器

    公开(公告)号：US06956808B2

    公开(公告)日：2005-10-18

    申请号：US10680215

    申请日：2003-10-08

    申请人： Shintaro Miyanishi ,  Kunio Kojima ,  Hiroshi Fuji ,  Mototaka Taneya

    发明人： Shintaro Miyanishi ,  Kunio Kojima ,  Hiroshi Fuji ,  Mototaka Taneya

    IPC分类号： H01S5/30 ,  G11B7/12 ,  G11B7/135 ,  G11B7/00 ,  H01S5/00

    CPC分类号： G11B7/1387 ,  G11B7/122

    摘要： An aperture 12 for producing an evanescent wave is provided at an n-Au electrode 106. The aperture 12 is directed roughly perpendicularly to a direction in which end faces 104a of an active layer 104 of an optical device oppose to each other, and therefore, laser light generated in the active layer 104 is made incident in the form of the p-polarized light. By the incidence of the p-polarized laser light, an evanescent wave of a comparatively great intensity is obtained from the aperture 12. With this arrangement, an optical device capable of obtaining an evanescent wave of a comparatively great intensity is provided.

    摘要翻译： 在n-Au电极106处设置用于产生ev逝波的孔12。 孔12大致垂直于光学装置的有源层104的端面104a彼此相对的方向，因此在有源层104中产生的激光以p的形式入射 -偏振光。 通过p极化激光的入射，从孔12获得相对较大强度的ev逝波。 通过这种布置，可以提供能够获得相当大强度的ev逝波的光学装置。

    Semiconductor laser
    96.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US06618416B1

    公开(公告)日：2003-09-09

    申请号：US09807003

    申请日：2001-06-22

    申请人： Mototaka Taneya ,  Kunihiro Takatani ,  Susumu Ohmi

    发明人： Mototaka Taneya ,  Kunihiro Takatani ,  Susumu Ohmi

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/0021 ,  H01S5/2004 ,  H01S5/2086 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2218 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/34333

    摘要： An InGaAlN-based semiconductor laser device, comprising a first layer of a first conductivity type, an active layer having a smaller forbidden band than that of the first layer, and a second layer of a second conductivity type having a larger forbidden band than that of the active layer. The second layer includes a flat region and a stripe-shaped projecting structure. A stripe-shaped optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripe-shaped projecting structure. A current-constricting layer of the first conductivity type or of a high resistance is formed for covering a top surface of the flat region of the second layer, a side surface of the projecting structure of the second layer, and a side surface of the optical waveguide forming layer. A difference between a thermal expansion coefficient of the current-constricting layer and a thermal expansion coefficient of the second layer is in the range of −4×10−9/° C. to +4×10−9/° C.

    摘要翻译： 1.一种InGaAlN系半导体激光器件，其特征在于，具有第一导电型的第一层，比第一层的禁带宽的有源层，以及具有比第一导电类型更大的禁带宽度的第二导电类型的第二层， 活动层。 第二层包括平坦区域和条形突起结构。 在条状突起结构上形成具有比第二层折射率大的第二导电类型的条形光波导形成层。 形成第一导电型或高电阻的电流限制层，用于覆盖第二层的平坦区域的顶表面，第二层的突出结构的侧表面和光学器件的侧表面 波导形成层。 电流限制层的热膨胀系数与第二层的热膨胀系数之间的差在-4×10 -9 /℃至+ 4×10 -9 /℃的范围内。

    Optical data reading apparatus and method
    97.
    发明授权
    Optical data reading apparatus and method 失效
    光学数据读取装置及方法

    公开(公告)号：US5657307A

    公开(公告)日：1997-08-12

    申请号：US403257

    申请日：1995-03-10

    申请人： Mototaka Taneya ,  Tatsuya Morioka ,  Hidenori Kawanishi ,  Atsushi Shimonaka

    发明人： Mototaka Taneya ,  Tatsuya Morioka ,  Hidenori Kawanishi ,  Atsushi Shimonaka

    IPC分类号： G11B7/00 ,  G11B7/005 ,  G11B7/125

    CPC分类号： G11B7/127 ,  G11B7/005 ,  G11B7/126 ,  G11B2007/0013

    摘要： An optical data reading method and apparatus for photoelectrically converting reflection light of a laser beam radiated onto a recording medium and thereby reproducing digital data recorded in the recording medium, performing a coherent detection by photoelectrically converting a first laser beam having a light frequency .nu..sub.1 and a second laser beam having a light frequency .nu..sub.2, where .nu..sub.1 -.nu..sub.2 .gtoreq.R (R: rate of reading the digital data), in a state where wavefronts of the first and second laser beams are aligned with each other, detecting temporal changes of either an amplitude or a phase of a beat signal component of the first and second laser beams, having a frequency of (.nu..sub.1 -.nu..sub.2) and being included in an photoelectrically converted output, and reading the digital data recorded in the recording medium based on a result of detection.

    摘要翻译： 一种光学数据读取方法和装置，用于对辐射到记录介质上的激光束的反射光进行光电转换，从而再现记录在记录介质中的数字数据，通过光电转换具有光频率nu 1的第一激光束和 在第一和第二激光束的波前彼此对准的状态下，具有光频率nu 2的第二激光束，其中nu 1 -nu 2> / = R（R：读数字数据的速率） 检测第一和第二激光束的拍频信号分量的幅度或相位的时间变化，其频率为（nu-nu 2）并被包括在光电转换输出中，并且读取记录在 基于检测结果的记录介质。

    Spatial optical transmission apparatus and method
    99.
    发明授权
    Spatial optical transmission apparatus and method 失效
    空间光传输装置及方法

    公开(公告)号：US5539562A

    公开(公告)日：1996-07-23

    申请号：US301963

    申请日：1994-09-07

    申请人： Tatsuya Morioka ,  Mototaka Taneya ,  Hidenori Kawanishi ,  Atsushi Shimonaka

    发明人： Tatsuya Morioka ,  Mototaka Taneya ,  Hidenori Kawanishi ,  Atsushi Shimonaka

    IPC分类号： H04B10/11 ,  H04B10/07 ,  H04B10/118 ,  H04B10/2507 ,  H04B10/516 ,  H04B10/54 ,  H04B10/556 ,  H04B10/564 ,  H04B10/61 ,  H04B10/00

    CPC分类号： H04B10/1125

    摘要： A spatial optical transmission apparatus includes: a light signal transmitting device for generating a signal beam which is modulated in accordance with a signal to be transmitted and is intensity-modulated with a lower frequency compared with a signal transmission speed; and a light signal demodulating device for receiving the signal beam from the light signal transmitting device by a detector, adjusting the direction of a locally oscillated beam based on the received signal beam so as to have a predetermined relationship with the direction of the signal beam so that intensity-modulated components in an output signal from the detector falls within a predetermined range of intensity, thereby aligning the wavefront of the signal beam with the wavefront of the locally oscillated beam, and extracting signal components which correspond to the transmitted signal from signal components modulated in accordance with the transmitted signal in the signal beam.

    摘要翻译： 一种空间光传输装置，包括：光信号发送装置，用于产生根据要发送的信号进行调制并与信号传输速度相比以较低的频率进行强度调制的信号光束; 以及光信号解调装置，用于通过检测器接收来自光信号发射装置的信号光束，基于接收信号光束调整局部振荡光束的方向，以便与信号光束的方向具有预定的关系 来自检测器的输出信号中的强度调制分量落在预定的强度范围内，从而将信号波束的波前与局部振荡波束的波阵面对准，并从信号分量中提取与发射信号相对应的信号分量 根据信号光束中的发射信号进行调制。

    Assembly structure for an optical integrated circuit device
    100.
    发明授权
    Assembly structure for an optical integrated circuit device 失效
    光学集成电路器件的组装结构

    公开(公告)号：US5488678A

    公开(公告)日：1996-01-30

    申请号：US283743

    申请日：1994-08-01

    申请人： Mototaka Taneya ,  Hidenori Kawanishi ,  Tatsuya Morioka ,  Atsushi Shimonaka

    发明人： Mototaka Taneya ,  Hidenori Kawanishi ,  Tatsuya Morioka ,  Atsushi Shimonaka

    IPC分类号： H01L27/15 ,  G02B6/122 ,  G02B6/42 ,  H01S5/00 ,  H01S5/022 ,  H01S5/042 ,  G02B6/12

    CPC分类号： G02B6/42 ,  G02B6/423 ,  G02B6/4232 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01079

    摘要： In an assembly structure of an optical integrated circuit device for assembling a semiconductor laser device and an optical integrated circuit substrate, the semiconductor laser device includes a recessed/raised structure. On the other hand, the optical integrated circuit substrate includes another recessed/raised structure to fit the recessed/raised structure of the semiconductor laser device. These recessed/raised structures are formed so that their cross sections taken parallel to the layers forming the semiconductor laser device are symmetric in shape about the respective optical axes of the semiconductor laser device and the optical integrated circuit substrate. Further, the recessed/raised structures preferably contain a tapered portion as part of its contour, the taper forming a prescribed angle with the respective optical axes. Thus, the mounting accuracy required to achieve the prescribed coupling efficiency in the optical integrated circuit device can be obtained by simple mechanical operations.

    摘要翻译： 在用于组装半导体激光器件和光学集成电路衬底的光学集成电路器件的组装结构中，半导体激光器件包括凹入/凸起结构。 另一方面，光集成电路基板包括与半导体激光装置的凹凸结构配合的另一凹凸结构。 这些凹凸结构被形成为使得它们与形成半导体激光器件的层平行的截面相对于半导体激光器件和光学集成电路衬底的各个光轴对称。 此外，凹入/凸起结构优选地包含作为其轮廓的一部分的锥形部分，锥形与各个光轴形成规定的角度。 因此，通过简单的机械操作可以获得在光集成电路器件中实现规定的耦合效率所需的安装精度。