公开(公告)号：US07005601B2

公开(公告)日：2006-02-28

申请号：US10126419

申请日：2002-04-18

申请人： Dean Jennings

发明人： Dean Jennings

IPC分类号： B23K26/00

CPC分类号： H01L21/02532 ,  B23K26/03 ,  B23K26/0643 ,  B23K26/0652 ,  B23K26/0665 ,  B23K26/082 ,  B23K26/083 ,  B23K26/0838 ,  B23K26/123 ,  B23K26/32 ,  B23K26/34 ,  B23K2101/40 ,  B23K2103/50 ,  C23C8/00 ,  C23C8/10 ,  C23C8/22 ,  C23C16/047 ,  C23C16/481 ,  H01L21/0262 ,  H01L21/2026

摘要： The thermal flux processing device includes a continuous wave electromagnetic radiation source, a stage, optics, and a translation mechanism. The continuous wave electromagnetic radiation source is preferably a diode/s. The stage is configured to receive a semiconductor substrate thereon. The optics are preferably disposed between the continuous wave electromagnetic radiation source and the stage. Also, the optics are configured to focus continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the semiconductor substrate. A length of the line of continuous wave electromagnetic radiation extends across an entire width of the semiconductor substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another, and preferably includes a chuck for securely grasping the substrate. A method for thermally processing a semiconductor substrate is also provided.

公开(公告)号：US20050218124A1

公开(公告)日：2005-10-06

申请号：US11079785

申请日：2005-03-14

申请人： Dean Jennings ,  Mark Yam ,  Abhilash Mayur ,  Vernon Behrens ,  Paul O'Brien ,  Leonid Tertitski ,  Alexander Goldin

发明人： Dean Jennings ,  Mark Yam ,  Abhilash Mayur ,  Vernon Behrens ,  Paul O'Brien ,  Leonid Tertitski ,  Alexander Goldin

IPC分类号： B23K26/03 ,  B23K26/073 ,  B23K26/42 ,  C23C8/00 ,  C23C8/10 ,  C23C8/22 ,  C23C16/04 ,  C23C16/48 ,  H01L21/20 ,  B23K26/06

CPC分类号： H01L21/02683 ,  B23K26/032 ,  B23K26/034 ,  B23K26/04 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/0665 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/083 ,  B23K26/0838 ,  B23K26/0869 ,  B23K26/123 ,  B23K26/125 ,  B23K26/142 ,  B23K26/32 ,  B23K26/34 ,  B23K26/705 ,  B23K2101/34 ,  B23K2101/40 ,  B23K2103/08 ,  B23K2103/50 ,  C23C8/00 ,  C23C8/10 ,  C23C8/22 ,  C23C16/047 ,  C23C16/481 ,  G02B27/0955 ,  H01L21/00 ,  H01L21/2026 ,  H01L21/67115

摘要： The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

摘要翻译： 热处理装置包括平台，连续波电磁辐射源，一系列透镜，平移机构，检测模块，三维自动对焦以及计算机系统。 该台被配置为在其上接收基板。 连续波电磁辐射源被设置在与该台相邻的位置，并且被配置成沿着朝向衬底的路径发射连续波电磁辐射。 该系列透镜设置在连续波电磁辐射源和台之间，并被配置为将连续波电磁辐射冷凝成基片表面上的连续波电磁辐射线。 翻译机构被配置为相对于彼此平移连续波电磁辐射的阶段和线。 检测模块位于路径内，被配置为检测连续波电磁辐射。

公开(公告)号：US06803297B2

公开(公告)日：2004-10-12

申请号：US10251440

申请日：2002-09-20

申请人： Dean Jennings ,  Sairaju Tallavarjula ,  Randhir Thakur

发明人： Dean Jennings ,  Sairaju Tallavarjula ,  Randhir Thakur

IPC分类号： H01L21425

CPC分类号： H01L21/67115 ,  H01L21/324 ,  H01L21/67109

摘要： A method for activating implanted dopants in a semiconductor substrate to form shallow junctions comprises the steps of: maintaining gas pressure in the processing chamber at a level significantly lower than atmospheric pressure, providing a flow of a carrier gas into the processing chamber, subjecting the substrate to a temperature treatment process, and introducing oxygen into the processing chamber during all or part of the temperature treatment process.

公开(公告)号：US6140205A

公开(公告)日：2000-10-31

申请号：US844973

申请日：1997-04-23

申请人： Dean Jennings

发明人： Dean Jennings

IPC分类号： H01L21/762 ,  H01L21/8234 ,  H01L29/10 ,  H01L21/30

CPC分类号： H01L29/105 ,  H01L21/76251 ,  H01L21/823493 ,  Y10S438/977

摘要： A method of forming a semiconductor substrate, comprising the steps of: providing a device substrate of a first conductivity type having a first surface and a second surface, and a handle substrate; depositing a dopant in the first surface of the wafer; diffusing the dopant through the wafer from the first surface toward the second surface, thereby forming a well; bonding the first surface of the device wafer to the handle substrate; and thinning the device substrate to yield a final device layer with a retrograde well. The dopant may be of the first or a second conductivity type.

摘要翻译： 一种形成半导体衬底的方法，包括以下步骤：提供具有第一表面和第二表面的第一导电类型的器件衬底和手柄衬底; 在晶片的第一表面中沉积掺杂剂; 将掺杂剂从第一表面向第二表面扩散通过晶片，从而形成阱; 将装置晶片的第一表面接合到手柄基板; 并使装置基板变薄以产生具有逆行井的最终装置层。 掺杂剂可以是第一或第二导电类型。

公开(公告)号：US6037239A

公开(公告)日：2000-03-14

申请号：US841494

申请日：1997-04-23

申请人： Dean Jennings

发明人： Dean Jennings

IPC分类号： H01L21/285 ,  H01L21/763 ,  H01L21/302

CPC分类号： H01L21/28518 ,  H01L21/28512 ,  H01L21/763

摘要： A method for dissipating accumulated charge in a trench isolation structure, comprising the steps of: forming a contact region of an area having a cross section greater than the width of the isolation structure; and coupling the isolation structure to a charge dissipation means.

摘要翻译： 一种用于消散沟槽隔离结构中的累积电荷的方法，包括以下步骤：形成截面大于隔离结构宽度的区域的接触区域; 并将隔离结构耦合到电荷消耗装置。

公开(公告)号：US4910160A

公开(公告)日：1990-03-20

申请号：US361171

申请日：1989-06-06

申请人： Dean Jennings ,  Matthew S. Buynoski

发明人： Dean Jennings ,  Matthew S. Buynoski

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/732

CPC分类号： H01L27/0826 ,  H01L21/761 ,  H01L21/82285

摘要： A process is disclosed for forming high-performance, high voltage PNP and NPN power transistors in a conventional monolithic, planar, epitaxial PNP junction isolated integrated circuit. The process permits independently optimizing the NPN and PNP power trransitors. Where high-voltage devices are desired a field threshold adjustment implant is applied. It also includes provisions for testing critical portions of the process at appropriate points.