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107 条记录 (耗时 0.031 秒)

    RF plasma method
    92.
    发明授权
    RF plasma method 失效
    射频等离子体法

    公开(公告)号：US06270687B1

    公开(公告)日：2001-08-07

    申请号：US09564042

    申请日：2000-04-27

    申请人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Jeng Hwang ,  Steve S. Y. Mak

    发明人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Jeng Hwang ,  Steve S. Y. Mak

    IPC分类号： B44C122

    CPC分类号： H01J37/32477 ,  H01J37/321

    摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.

    摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。 保护层防止在室内形成的等离子体从室壁溅射材料。 蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。 类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。 线圈天线​​可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。 用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。 分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。 单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。 导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

    Magnetron for low pressure, full face erosion
    94.
    发明授权
    Magnetron for low pressure, full face erosion 有权
    磁控管为低压，全面侵蚀

    公开(公告)号：US06228235B1

    公开(公告)日：2001-05-08

    申请号：US09261002

    申请日：1999-03-02

    申请人： Avi Tepman ,  James van Gogh

    发明人： Avi Tepman ,  James van Gogh

    IPC分类号： C23C1435

    CPC分类号： H01J37/3494 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

    摘要： A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subsequent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.

    摘要翻译： 一种用于控制用于在真空室中溅射靶的表面的磁控管的操作的方法，所述方法包括以下步骤：在溅射的低压阶段期间，使由磁控管源产生的磁场被限制 主要到目标表面的内部区域，以便在溅射过程中减少电子从目标的泄漏; 并且在随后的溅射高压阶段期间，使得由磁体组件产生的磁场延伸到目标表面的外部区域中，从而从靶的表面的外部区域溅射材料。 溅射的高压相的压力高于溅射的低压相的压力。

    Apparatus for full wafer deposition
    95.
    发明授权
    Apparatus for full wafer deposition 有权
    全晶圆沉积装置

    公开(公告)号：US6143086A

    公开(公告)日：2000-11-07

    申请号：US309016

    申请日：1999-05-10

    申请人： Avi Tepman

    发明人： Avi Tepman

    IPC分类号： H01L21/203 ,  C23C14/50 ,  C23C14/56 ,  C23C16/44 ,  C23C16/458 ,  H01L21/205 ,  C23C16/00 ,  C23C14/00

    CPC分类号： C23C16/4585 ,  C23C14/50 ,  C23C14/564 ,  C23C16/4401

    摘要： A readily removable deposition shield for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The deposition shield includes a shield of cylindrical configuration (or other configuration conformed to the internal shape of the substrate and the chamber) which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and the substrate support. Collectively, these components prevent deposition on the chamber and hardware outside the processing region. Also, the cylindrical shield and the shield ring may be removed as a unit. Locating means such as pins may be mounted or formed in the support about the periphery of the substrate for centering the substrate. Also, a peripheral groove may be formed in the substrate support peripheral to the substrate, for preventing material deposited on the support peripheral to the substrate from sticking to the substrate. The substrate is supported on spacers mounted on the substrate support; the resulting gap between the substrate and the support also prevents the material deposited on the support from bonding to the substrate. The result of the various features is an effective shield which allows long intervals before the shield must be removed for cleaning or replacement and which is easy to remove when necessary. In addition, the entire upper surface of the substrate is available for processing.

    摘要翻译： 公开了用于处理诸如化学气相沉积（CVD），离子注入或物理气相沉积（PVD）或溅射室的室的容易移除的沉积屏蔽。 沉积屏蔽包括圆柱形构造的屏蔽件（或符合衬底和室的内部形状的其它构造），其被安装到腔室以便容易地移除，例如通过螺钉，并且限定沿着衬底的周边的空间 支持。 屏蔽环插入到外围空间中，因此以可移动的方式安装并且自动围绕基板居中。 屏蔽环与圆柱形屏蔽和基板支撑重叠。 总的来说，这些部件防止在处理区域外的室和硬件上沉积。 此外，圆柱形护罩和屏蔽环可以作为一个单元被移除。 诸如销的定位装置可以围绕基板的周边安装或形成在支撑件中，以使基板居中。 此外，可以在基板周边的基板支撑件中形成外围槽，以防止沉积在基板周围的支撑体上的材料粘附到基板。 基板被支撑在安装在基板支撑件上的间隔件上; 衬底和支撑体之间的所产生的间隙也防止沉积在支撑体上的材料结合到衬底上。 各种功能的结果是有效的屏蔽，在屏蔽层必须移除以进行清洁或更换之前允许长时间间隔，并且在必要时易于移除。 此外，衬底的整个上表面可用于处理。

    Two-piece slit valve insert for vacuum processing system
    96.
    发明授权
    Two-piece slit valve insert for vacuum processing system 失效
    两片式真空处理系统的狭缝阀插件

    公开(公告)号：US6045620A

    公开(公告)日：2000-04-04

    申请号：US893813

    申请日：1997-07-11

    申请人： Avi Tepman ,  Robert B. Lowrance

    发明人： Avi Tepman ,  Robert B. Lowrance

    IPC分类号： H01L21/302 ,  F16K27/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/00

    CPC分类号： H01L21/67126 ,  Y10S414/139 ,  Y10T29/49716

    摘要： A vacuum processing system has a transfer chamber with a slit valve at which is attached a process chamber and with a slit valve insert disposed in the slit valve for matching up with the process chamber. The slit valve may be made of two pieces, an outer portion that slides into the transfer chamber's slit valve opening from the outside of the transfer chamber, and an inner portion that slides into the outer portion from the inside of the transfer chamber. The portions of the insert permit any process chamber to be attached to any slit valve opening. The outer portion may not be removed from the slit valve opening when a process chamber is attached to the transfer chamber, but the inner portion may be easily removed for servicing regardless of in whether a process chamber is attached.

    摘要翻译： 真空处理系统具有带有狭缝阀的传送室，在该传送室上安装有处理室和设置在狭缝阀中的狭缝阀插入件，用于与处理室匹配。 狭缝阀可以由两片制成，外部从转印室的外侧滑入转印室的狭缝阀开口，以及从转印室的内部滑入外部的内部。 插入部分允许任何处理室连接到任何狭缝阀开口。 当处理室附接到传送室时，外部可能不从狭缝阀开口移除，但是无论是否附着处理室，内部可以容易地移除用于维修。

    Gas injection slit nozzle for a plasma process reactor
    98.
    发明授权
    Gas injection slit nozzle for a plasma process reactor 失效
    用于等离子体处理反应器的气体注入狭缝喷嘴

    公开(公告)号：US5885358A

    公开(公告)日：1999-03-23

    申请号：US682803

    申请日：1996-07-09

    申请人： Dan Maydan ,  Steve S. Y. Mak ,  Donald Olgado ,  Gerald Zheyao Yin ,  Timothy D. Driscoll ,  James S. Papanu ,  Avi Tepman

    发明人： Dan Maydan ,  Steve S. Y. Mak ,  Donald Olgado ,  Gerald Zheyao Yin ,  Timothy D. Driscoll ,  James S. Papanu ,  Avi Tepman

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

    CPC分类号： H01J37/321 ,  C23C16/455 ,  H01J37/3244

    摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.

    摘要翻译： 一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。 气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。 根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。 采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。

    Self-cleaning plasma processing reactor
    99.
    发明授权
    Self-cleaning plasma processing reactor 失效
    自清洗等离子处理反应器

    公开(公告)号：US5879575A

    公开(公告)日：1999-03-09

    申请号：US976539

    申请日：1997-11-21

    申请人： Avi Tepman ,  Yan Ye

    发明人： Avi Tepman ,  Yan Ye

    IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H05H1/00

    CPC分类号： H01J37/32862 ,  H01J37/321 ,  Y10S156/916 ,  Y10S438/905 ,  Y10S977/70

    摘要： A method for simultaneously processing a workpiece using a plasma and cleaning the reactor in which processing takes place is disclosed. The plasma generated in the reactor performs simultaneous workpiece processing and reactor cleaning. Reactor cleaning may be accomplished by directing a portion of the plasma at an inner surface of the reactor such as by a power source auxiliary to that used to produce the processing plasma. An apparatus for carrying out a method for simultaneously processing a workpiece with a plasma and cleaning a reactor of etch residues generated from processing is disclosed.

    摘要翻译： 公开了一种使用等离子体同时处理工件并清洁进行处理的反应器的方法。 在反应器中产生的等离子体同时进行工件处理和反应器清洁。 反应器清洁可以通过将等离子体的一部分引导到反应器的内表面来实现，例如通过辅助于用于产生处理等离子体的电源的电源。 公开了一种用于执行用等离子体同时处理工件并清洁由处理产生的蚀刻残留物的反应器的方法的装置。