公开(公告)号：US07022608B2

公开(公告)日：2006-04-04

申请号：US10419440

申请日：2003-04-21

申请人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

发明人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

IPC分类号： H01L21/302

CPC分类号： C09G1/02

摘要： A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.

公开(公告)号：US07012025B2

公开(公告)日：2006-03-14

申请号：US09755717

申请日：2001-01-05

申请人： Lizhong Sun ,  Stan D. Tsai ,  Shijian Li ,  Feng Liu

发明人： Lizhong Sun ,  Stan D. Tsai ,  Shijian Li ,  Feng Liu

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.

公开(公告)号：US07008554B2

公开(公告)日：2006-03-07

申请号：US10193810

申请日：2002-07-11

申请人： Stan D. Tsai ,  Shijian Li ,  Feng Q. Liu ,  Lizhong Sun ,  Liang-Yuh Chen

发明人： Stan D. Tsai ,  Shijian Li ,  Feng Q. Liu ,  Lizhong Sun ,  Liang-Yuh Chen

IPC分类号： C09K13/00

CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

公开(公告)号：US20050245181A1

公开(公告)日：2005-11-03

申请号：US11046189

申请日：2005-01-28

申请人： Hung Chen ,  Shijian Li ,  John White ,  Ramin Emami ,  Fred Redeker ,  Steven Zuniga ,  Ramakrishna Cheboli

发明人： Hung Chen ,  Shijian Li ,  John White ,  Ramin Emami ,  Fred Redeker ,  Steven Zuniga ,  Ramakrishna Cheboli

IPC分类号： B24B5/00 ,  B24B37/04 ,  B24B41/06

CPC分类号： B24B37/30

摘要： A carrier head for chemical mechanical polishing is described. The carrier head includes a backing assembly, a housing and a damping material. The backing assembly includes a substrate support surface. The housing is connectable to a drive shaft to rotate with the drive shaft about a rotation axis. In one implementation, the damping material is in a load path between the backing assembly and the housing to reduce transmission of vibrations from the backing assembly to the housing.

摘要翻译： 描述了用于化学机械抛光的载体头。 载体头包括背衬组件，壳体和阻尼材料。 背衬组件包括基板支撑表面。 壳体可连接到驱动轴，以驱动轴绕旋转轴线旋转。 在一个实施方案中，阻尼材料位于背衬组件和壳体之间的负载路径中，以减少振动从背衬组件传递到壳体。

公开(公告)号：US20050229426A1

公开(公告)日：2005-10-20

申请号：US11054336

申请日：2005-02-09

申请人： Younes Achkire ,  Alexander Lerner ,  Boris Govzman ,  Boris Fishkin ,  Michael Sugarman ,  Rashid Mavliev ,  Haoquan Fang ,  Shijian Li ,  Guy Shirazi ,  Jianshe Tang

发明人： Younes Achkire ,  Alexander Lerner ,  Boris Govzman ,  Boris Fishkin ,  Michael Sugarman ,  Rashid Mavliev ,  Haoquan Fang ,  Shijian Li ,  Guy Shirazi ,  Jianshe Tang

IPC分类号： B05D3/02 ,  F26B3/00 ,  H01L21/00 ,  H01L21/306

CPC分类号： H01L21/02052 ,  H01L21/67034

摘要： In a first aspect, a first method of drying a substrate is provided. The first method includes the steps of (1) lifting a substrate through an air/fluid interface at a first rate; (2) directing a drying vapor at the air/fluid interface during lifting of the substrate; and (3) while a portion of the substrate remains in the air/fluid interface, reducing a rate at which a remainder of the substrate is lifted through the air/fluid interface to a second rate. The drying vapor may form an angle of about 23° with the air/fluid interface and/or the second rate may be about 2.5 mm/sec.

摘要翻译： 在第一方面中，提供了干燥基板的第一种方法。 第一种方法包括以下步骤：（1）以第一速率提升衬底通过空气/流体界面; （2）在提升衬底期间在空气/流体界面处引导干燥蒸汽; 和（3）当衬底的一部分保留在空气/流体界面中时，降低衬底的剩余部分通过空气/流体界面提升到第二速率的速率。 干燥蒸气可以与空气/流体界面形成约23°的角度和/或第二速率可以为约2.5mm / sec。

公开(公告)号：US20050032381A1

公开(公告)日：2005-02-10

申请号：US10939750

申请日：2004-09-13

申请人： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred Redeker

发明人： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred Redeker

IPC分类号： B24B1/00 ,  B24B5/00 ,  B24B29/00 ,  B24B37/04 ,  C23F1/00 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

公开(公告)号：US06261157B1

公开(公告)日：2001-07-17

申请号：US09318225

申请日：1999-05-25

申请人： Rajeev Bajaj ,  Fritz C. Redeker ,  John M. White ,  Shijian Li ,  Yutao Ma

发明人： Rajeev Bajaj ,  Fritz C. Redeker ,  John M. White ,  Shijian Li ,  Yutao Ma

IPC分类号： B24B722

CPC分类号： B24B37/345 ,  B24B27/0023 ,  H01L21/02074 ,  H01L21/3212

摘要： A selective Damascene chemical mechanical polishing (CMP) technique is used to planarize a semiconductor device to remove surface topography. The semiconductor device includes a semiconductor layer formed on a substrate, an insulating layer formed over the semiconductor layer and patterned to expose a portion of the semiconductor layer, a barrier layer formed over the insulating layer and the exposed portion of the semiconductor layer, and an electrically conductive layer formed over the barrier layer. The semiconductor device is pressed against a first rotating polishing pad that has no embedded abrasive particles to remove a portion of the conductive layer that overlies both the barrier layer and the insulating layer. The semiconductor device is then pressed against a second rotating polishing pad that has embedded abrasive particles to expose a portion of the barrier layer that overlies the insulating layer. The device is then pressed against a third rotating polishing pad that has no embedded abrasive particles to remove the portion of the barrier layer that overlies the insulating layer.

摘要翻译： 使用选择性的大马士革化学机械抛光（CMP）技术来平面化半导体器件以去除表面形貌。 半导体器件包括形成在衬底上的半导体层，形成在半导体层上并被图案化以暴露半导体层的一部分的绝缘层，形成在绝缘层上的阻挡层和半导体层的暴露部分， 形成在阻挡层上的导电层。 半导体器件被压在没有嵌入的磨料颗粒的第一旋转抛光垫上，以去除覆盖阻挡层和绝缘层两者的导电层的一部分。 然后将半导体器件压在具有嵌入的磨料颗粒的第二旋转抛光垫上，以暴露位于绝缘层上的阻挡层的一部分。 然后将装置压在没有嵌入的磨料颗粒的第三旋转抛光垫上，以去除覆盖在绝缘层上的阻挡层的部分。

公开(公告)号：US08519461B2

公开(公告)日：2013-08-27

申请号：US13455453

申请日：2012-04-25

申请人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

发明人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

IPC分类号： H01L21/02

CPC分类号： H01L23/48 ,  H01L21/4763 ,  H01L21/76898 ,  H01L2924/14

摘要： Presented are device structures and methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.

摘要翻译： 提出了三维集成电路的器件结构和方法，该三维集成电路包括用于三维集成电路的集成的线通孔的后接后端。 本发明的另一方面包括根据本发明的方法制造的三维集成电路。

公开(公告)号：US20120024230A1

公开(公告)日：2012-02-02

申请号：US13253829

申请日：2011-10-05

申请人： Shijian Li ,  Fritz Redeker ,  Yezdi Dordi

发明人： Shijian Li ,  Fritz Redeker ,  Yezdi Dordi

IPC分类号： H01L21/70 ,  B25B11/00 ,  C23C16/50 ,  C23C16/44 ,  C23C16/458

CPC分类号： H01L21/70 ,  C23C16/045 ,  C23C16/4586 ,  H01L21/67017 ,  H01L21/677 ,  H01L21/6838 ,  H01L21/68714 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T24/44 ,  H01L2924/00012 ,  H01L2924/00

摘要： The present invention pertains to methods, apparatuses, and systems for fabricating three-dimensional integrated circuits. One or more embodiments of systems, apparatuses, and/or methods according to the present invention are presented.

摘要翻译： 本发明涉及用于制造三维集成电路的方法，装置和系统。 呈现了根据本发明的系统，装置和/或方法的一个或多个实施例。

公开(公告)号：US07980255B2

公开(公告)日：2011-07-19

申请号：US11846400

申请日：2007-08-28

申请人： Younes Achkire ,  Alexander Lerner ,  Boris T. Govzman ,  Boris Fishkin ,  Michael Sugarman ,  Rashid Mavleiv ,  Haoquan Fang ,  Shijian Li ,  Guy Shirazi ,  Jianshe Tang

发明人： Younes Achkire ,  Alexander Lerner ,  Boris T. Govzman ,  Boris Fishkin ,  Michael Sugarman ,  Rashid Mavleiv ,  Haoquan Fang ,  Shijian Li ,  Guy Shirazi ,  Jianshe Tang

IPC分类号： B08B3/04

CPC分类号： H01L21/67034 ,  B08B3/10 ,  H01L21/67751 ,  H01L21/681 ,  H01L21/68764 ,  Y10S414/139

摘要： In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluidnozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

摘要翻译： 在第一方面，提供一种适于处理晶片的模块。 模块包括具有一个或多个特征的处理部分，例如（1）可旋转晶片支撑件，用于从第一取向旋转输入晶片，其中晶片与负载端口对准至第二取向，其中晶片与 卸货港 （2）捕捉器，其适于在从所述处理部分卸载时与晶片被动接触和行进; （3）适于产生从其一侧到另一侧的层流空气流的封闭输出部分; （4）具有多个晶片接收器的输出部分; （5）浸没液体喷嘴; 和/或（6）干燥气体导流板等。其它方面包括晶片处理的方法。