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    INTERCONNECT STRUCTURE AND METHOD OF FABRICATING
    93.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF FABRICATING 有权
    互连结构和制作方法

    公开(公告)号：US20130009323A1

    公开(公告)日：2013-01-10

    申请号：US13613890

    申请日：2012-09-13

    申请人： Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran

    发明人： Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran

    IPC分类号： H01L23/48

    CPC分类号： H01L23/5329 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/02123 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/743 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material.

    摘要翻译： 提供一种互连结构，其包括半导体衬底; 图案化和固化的光致抗蚀剂，其中光致抗蚀剂含有低k电介质替代物，并且在其顶部和侧壁表面上包含形成通孔或沟槽的强化层; 以及通孔或沟槽中的导电填充材料。 还提供了一种用于制造互连结构的方法，其包括在半导体衬底上沉积光致抗蚀剂，其中光致抗蚀剂含有低k电介质成分; 将光刻胶成像曝光于光化辐射; 然后在光致抗蚀剂中形成通孔或沟槽的图案; 表面强化通孔或沟槽的图案，证明通孔或沟槽的顶部和侧壁上的强化层; 固化通孔或沟槽的图案，从而将光致抗蚀剂转化为电介质; 并用导电填充材料填充通孔和沟槽。

    Method of use of epoxy-containing cycloaliphatic acrylic polymers as orientation control layers for block copolymer thin films
    98.
    发明授权
    Method of use of epoxy-containing cycloaliphatic acrylic polymers as orientation control layers for block copolymer thin films 有权
    使用含环氧基的脂环族丙烯酸聚合物作为嵌段共聚物薄膜的取向控制层的方法

    公开(公告)号：US07989026B2

    公开(公告)日：2011-08-02

    申请号：US12013444

    申请日：2008-01-12

    申请人： Joy Cheng ,  Ho-Cheol Kim ,  Charles T. Rettner ,  Daniel P. Sanders ,  Ratnam Sooriyakumaran ,  Linda Sundberg

    发明人： Joy Cheng ,  Ho-Cheol Kim ,  Charles T. Rettner ,  Daniel P. Sanders ,  Ratnam Sooriyakumaran ,  Linda Sundberg

    IPC分类号： B05D5/00

    CPC分类号： B05D5/00 ,  B05D7/14 ,  B05D7/52 ,  C08L53/00 ,  C09D125/14 ,  C09D153/00

    摘要： Disclosed herein is a method of controlling the orientation of microphase-separated domains in a block copolymer film, comprising forming an orientation control layer comprising an epoxy-containing cycloaliphatic acrylic polymer on a surface of a substrate, irradiating and/or heating the substrate to crosslink the orientation control layer, and forming a block copolymer assembly layer comprising block copolymers which form microphase-separated domains, on a surface of the orientation control layer opposite the substrate. The orientation control layer can be selectively cross-linked to expose regions of the substrate, or the orientation control layer can be patterned without removing the layer, to provide selective patterning on the orientation control layer. In further embodiments, bilayer and trilayer imaging schemes are disclosed.

    摘要翻译： 本文公开了一种控制嵌段共聚物膜中微相分离的区域的取向的方法，包括在基材的表面上形成包含含环氧基的脂环族丙烯酸聚合物的取向控制层，照射和/或加热该基材以交联 取向控制层，并且在与衬底相对的取向控制层的表面上形成包含形成微相分离结构域的嵌段共聚物的嵌段共聚物组合层。 取向控制层可以选择性地交联以暴露衬底的区域，或者可以将取向控制层图案化而不去除该层，以在取向控制层上提供选择性图案化。 在另外的实施方案中，公开了双层和三层成像方案。

    Aligning polymer films
    100.
    发明申请
    Aligning polymer films 有权
    对准聚合物膜

    公开(公告)号：US20090212016A1

    公开(公告)日：2009-08-27

    申请号：US12036091

    申请日：2008-02-22

    申请人： Joy Cheng ,  Daniel P. Sanders ,  Ratnam Sooriyakumaran

    发明人： Joy Cheng ,  Daniel P. Sanders ,  Ratnam Sooriyakumaran

    IPC分类号： B44C1/22

    CPC分类号： H01L21/0337 ,  B81B2207/056 ,  B81C1/00031 ,  Y10T428/24322 ,  Y10T428/24612 ,  Y10T428/24802

    摘要： A Method. The method includes forming a substructure, on a substrate, including a feature having a sidewall of a first material and a bottom surface of a second material. Applying a solution including two immiscible polymers and third material to the substructure. The immiscible polymers include a first and second polymer. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. The first polymer is selectively removed. The second polymer remains, resulting in forming structures including the substructure, the third material, and the second polymer. The substructure has a pattern. The pattern is transferred to the substrate.

    摘要翻译： 一个方法。 该方法包括在基底上形成子结构，其包括具有第一材料的侧壁和第二材料的底表面的特征。 将包括两种不混溶的聚合物和第三种材料的溶液应用于底层结构。 不混溶的聚合物包括第一和第二聚合物。 第一聚合物对材料的选择性化学亲和力大于第二聚合物对材料的选择性化学亲和力。 第一聚合物与第二聚合物分离。 第一聚合物选择性地迁移到至少一个侧壁，导致第一聚合物设置在至少一个侧壁和第二聚合物之间。 选择性地除去第一种聚合物。 残留第二聚合物，导致形成包括亚结构，第三材料和第二聚合物的结构。 子结构具有图案。 将图案转移到基底。