摘要:
Disclosed is an information recording/reproducing apparatus which uses a rewritable recording medium having a sector structure, and in which a data writing gate signal and a data erasing gate signal are reproduced on the basis of an ID detection signal of a target sector, while a data reading gate signal and a marking gate signal are produced on the basis of the ID detection signal of the target sector or on the basis of an ID detection signal of a sector located N sectors before the target one, so that when data is to be renewed in a specific sector from which no ID detection signal can be obtained, marking is performed in the specific sector on the basis of an ID detection signal of a sector located N sectors before the specific sector and new data are rewritten into a substitutive sector, whereby it is possible to perform data erasing and data recording in a target sector with high reliability and high positional accuracy and it is possible to shorten gaps respectively in front and rear of a data field to thereby make it possible to efficiently use a data area.
摘要:
The present invention relates to semiconductor inspection and provides a technology capable of efficiently detecting a systematic defect. In the present system, with regard to the process (S7, S8) of matching hot spot (HS) points that can be simulated in advance and defect points obtained as a result of a visual inspection each other and the unmatched defect points, a process (S6, S9) of classifying the defect points into groups based on similarity of pattern layout at the defect points to determine the defects belonging to a pattern layout where defects frequently occur, thereby reliably detecting the systematic defect. Also, with a process (S11) of acquiring an uneven distribution in a defect occurrence distribution on a wafer, the systematic defect occurring due to topography of the wafer can also be detected.
摘要:
In automatic defect classification, a classification recipe must be set for each defect observation device. If a plurality of devices operate at the same stage, the classification class in the classification recipes must be the same. Problems have arisen whereby differences occur in the classification class in different devices when a new classification recipe is created. This defect classification system has a classification recipe storage unit; an information specification unit, the stage of a stored image, and device information. A corresponding defect specification unit specifies images of the same type of defect from images obtained from different image pickup devices at the same stage. An image conversion unit converts the images obtained from the different image pickup devices at the same stage into comparable similar images; and a recipe update unit records the classification classes in the classification recipes corresponding to the specified images of the same type of defect.
摘要:
A defect is efficiently and effectively classified by accurately determining the state of overlap between a design layout pattern and the defect. This leads to simple identification of a systematic defect. A defective image obtained through defect inspection or review of a semiconductor device is automatically pattern-matched with design layout data. A defect is superimposed on a design layout pattern for at least one layer of a target layer, a layer immediately above the target layer, and a layer immediately below the target layer. The state of overlap of the defect is determined as within the pattern, over the pattern, or outside the pattern, and the defect is automatically classified.
摘要:
An end mill including multiple spiral flutes in a helical shape around an axis that are formed in a periphery of the top portion of an end mill body which rotates on the axis. Cutting edges are formed at peripheral side ridge portions of wall surfaces of the flutes facing a front side in an end mill rotating direction. Honing is applied along each peripheral cutting edge such that the cutting edge has a variable honing width in the direction of the axis.
摘要:
A defect is efficiently and effectively classified by accurately determining the state of overlap between a design layout pattern and the defect. This leads to simple identification of a systematic defect. A defective image obtained through defect inspection or review of a semiconductor device is automatically pattern-matched with design layout data. A defect is superimposed on a design layout pattern for at least one layer of a target layer, a layer immediately above the target layer, and a layer immediately below the target layer. The state of overlap of the defect is determined as within the pattern, over the pattern, or outside the pattern, and the defect is automatically classified.
摘要:
In a process for manufacturing a semiconductor wafer, defect distribution state analysis is performed so as to facilitate identification of the defect cause including a device cause and a process cause by classifying the defect distribution state according to the defect position coordinates detected by the inspection device, into one of the distribution characteristic categories: repeated defects, clustered defects, arc-shaped regional defects, radial regional defects, line type regional defects, ring and blob type regional defects, and random defects.
摘要:
The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.
摘要:
A plurality of chip discharge flutes are located on an outer periphery of a tip portion of the end mill body which rotates on its axis. Helix angles between the axis and the cutting edges in the chip discharge flutes, of which are at least one or more; are different from others. A cross-section perpendicular to the axis shows that a flute bottom face in a main flute portion forms a concavely curved shape from the rake face to a point where the flute bottom face, touches a web thickness circle of the end mill body, forms a linear shape, and goes toward the end mill rotating direction; and a flute bottom face in a sub-flute portion forms a linear shape, intersects with the flute bottom face in the main flute portion at an obtuse angle, goes further toward the end mill rotating direction.
摘要:
In a process for manufacturing a semiconductor wafer, defect distribution state analysis is performed so as to facilitate identification of the defect cause including a device cause and a process cause by classifying the defect distribution state according to the defect position coordinates detected by the inspection device, into one of the distribution characteristic categories: repeated defects, clustered defects, arc-shaped regional defects, radial regional defects, line type regional defects, ring and blob type regional defects, and random defects.