公开(公告)号：US07858992B2

公开(公告)日：2010-12-28

申请号：US12366480

申请日：2009-02-05

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L29/04 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US20090121320A1

公开(公告)日：2009-05-14

申请号：US11887153

申请日：2006-03-02

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yoshihiro Ueta ,  Teruyoshi Takakura

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yoshihiro Ueta ,  Teruyoshi Takakura

IPC分类号： H01L29/12 ,  H01L21/365

CPC分类号： H01S5/22 ,  B82Y20/00 ,  C23C16/34 ,  C23C16/4481 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.

摘要翻译： 本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给 含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了这些问题。

公开(公告)号：US07421000B2

公开(公告)日：2008-09-02

申请号：US11704348

申请日：2007-02-09

申请人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

发明人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

IPC分类号： H01S5/00

CPC分类号： H01S5/20

摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2

摘要翻译： 一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上，折射率n}

公开(公告)号：US20070153854A1

公开(公告)日：2007-07-05

申请号：US11704348

申请日：2007-02-09

申请人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

发明人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

IPC分类号： H01S5/00

CPC分类号： H01S5/20

摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2

摘要翻译： 一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上，折射率n}

公开(公告)号：US07180487B2

公开(公告)日：2007-02-20

申请号：US10631932

申请日：2003-07-30

申请人： Takeshi Kamikawa ,  Shigetoshi Ito ,  Mototaka Taneya

发明人： Takeshi Kamikawa ,  Shigetoshi Ito ,  Mototaka Taneya

IPC分类号： G09G3/32

CPC分类号： H05B33/0866 ,  G09G3/14 ,  G09G3/2014 ,  G09G3/2081 ,  G09G3/32 ,  G09G2310/0272 ,  G09G2320/0626 ,  G09G2320/0666 ,  G09G2330/021 ,  H01L2224/48091 ,  H01L2224/49107 ,  H05B33/0818 ,  H05B33/0821 ,  H05B33/086 ,  H01L2924/00014

摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

摘要翻译： 发光装置包括发光部分，用于发光，光的颜色以驱动电流的值改变;驱动部分，用于驱动发光部分，使得发光部分发出具有所需颜色的光 并且通过基于指定期望颜色的信号和指定期望强度的信号产生驱动电流并且通过将驱动电流施加到发光部分来产生期望的强度。

公开(公告)号：US07123642B2

公开(公告)日：2006-10-17

申请号：US10789848

申请日：2004-02-27

申请人： Toshiyuki Kawakami ,  Mototaka Taneya

发明人： Toshiyuki Kawakami ,  Mototaka Taneya

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L2224/48463 ,  H01L2924/3025 ,  H01S5/02212 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/2231 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2304/04 ,  H01L2924/00

摘要： A multi-wavelength laser device includes at least two of a blue laser diode, a red laser diode, and an infrared laser diode, which are arranged in the same direction on the same base. One laser light emission point is arranged behind another in increasing order of wavelengths of the laser diodes.

摘要翻译： 多波长激光器件包括蓝色激光二极管，红色激光二极管和红外激光二极管中的至少两个，它们在同一基底上沿相同的方向布置。 一个激光发射点以激光二极管的波长递增的次序布置在另一个之后。

公开(公告)号：US07015058B2

公开(公告)日：2006-03-21

申请号：US10917514

申请日：2004-08-13

申请人： Kunihiro Takatani ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Kunihiro Takatani ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3202 ,  H01S2301/173

摘要： A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.

摘要翻译： 也可以使用III族氮化物半导体作为基板的氮化物半导体激光器件具有优异的操作特性和较长的激光振荡寿命。 在形成在GaN衬底上的III族氮化物半导体的分层结构中，激光光波导区域形成在垂直贯穿衬底的位错集中区域的正上方的别处，并且电极形成在 层叠结构，并且位于基底的底表面上，位于位错集中区域正上方或下方。 在层状结构的顶表面的一部分中，并且在位错集中区域的正上方和下方的衬底的底表面的一部分中，可以形成电介质层以防止电极与那些区域接触。

公开(公告)号：US06956808B2

公开(公告)日：2005-10-18

申请号：US10680215

申请日：2003-10-08

申请人： Shintaro Miyanishi ,  Kunio Kojima ,  Hiroshi Fuji ,  Mototaka Taneya

发明人： Shintaro Miyanishi ,  Kunio Kojima ,  Hiroshi Fuji ,  Mototaka Taneya

IPC分类号： H01S5/30 ,  G11B7/12 ,  G11B7/135 ,  G11B7/00 ,  H01S5/00

CPC分类号： G11B7/1387 ,  G11B7/122

摘要： An aperture 12 for producing an evanescent wave is provided at an n-Au electrode 106. The aperture 12 is directed roughly perpendicularly to a direction in which end faces 104a of an active layer 104 of an optical device oppose to each other, and therefore, laser light generated in the active layer 104 is made incident in the form of the p-polarized light. By the incidence of the p-polarized laser light, an evanescent wave of a comparatively great intensity is obtained from the aperture 12. With this arrangement, an optical device capable of obtaining an evanescent wave of a comparatively great intensity is provided.

摘要翻译： 在n-Au电极106处设置用于产生ev逝波的孔12。 孔12大致垂直于光学装置的有源层104的端面104a彼此相对的方向，因此在有源层104中产生的激光以p的形式入射 -偏振光。 通过p极化激光的入射，从孔12获得相对较大强度的ev逝波。 通过这种布置，可以提供能够获得相当大强度的ev逝波的光学装置。

公开(公告)号：US06891201B2

公开(公告)日：2005-05-10

申请号：US10466339

申请日：2002-01-09

申请人： Yuhzoh Tsuda ,  Takayuki Yuasa ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yukio Yamasaki

发明人： Yuhzoh Tsuda ,  Takayuki Yuasa ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yukio Yamasaki

IPC分类号： H01L33/00 ,  H01S5/02 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor light emitting device includes a processed substrate (101a) including a groove and a hill formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer (102) covering the groove and the hill of the processed substrate, and a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the nitride semiconductor underlayer. A current-constricting portion of the light emitting device structure is formed above a region more than 1 μm away from the center of the groove in the width direction and more than 1 μm away from the center of the hill in the width direction.

摘要翻译： 氮化物半导体发光器件包括：处理衬底（101a），其包括形成在氮化物半导体衬底的主表面上的沟槽和丘丘;覆盖所述沟槽和所述被处理衬底的所述山丘的氮化物半导体衬底（102），以及 具有包括量子阱层或量子阱层的发光层（106）和与n型层（103-105）和ap型层（107）之间的量子阱层接触的阻挡层的发光器件结构 -110）在氮化物半导体衬底上。 发光器件结构的电流限制部分形成在距宽度方向上的槽的中心超过1um的区域上方，并且在宽度方向上距离山的中心大于1mum。

公开(公告)号：US06618416B1

公开(公告)日：2003-09-09

申请号：US09807003

申请日：2001-06-22

申请人： Mototaka Taneya ,  Kunihiro Takatani ,  Susumu Ohmi

发明人： Mototaka Taneya ,  Kunihiro Takatani ,  Susumu Ohmi

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0021 ,  H01S5/2004 ,  H01S5/2086 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2218 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/34333

摘要： An InGaAlN-based semiconductor laser device, comprising a first layer of a first conductivity type, an active layer having a smaller forbidden band than that of the first layer, and a second layer of a second conductivity type having a larger forbidden band than that of the active layer. The second layer includes a flat region and a stripe-shaped projecting structure. A stripe-shaped optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripe-shaped projecting structure. A current-constricting layer of the first conductivity type or of a high resistance is formed for covering a top surface of the flat region of the second layer, a side surface of the projecting structure of the second layer, and a side surface of the optical waveguide forming layer. A difference between a thermal expansion coefficient of the current-constricting layer and a thermal expansion coefficient of the second layer is in the range of −4×10−9/° C. to +4×10−9/° C.

摘要翻译： 1.一种InGaAlN系半导体激光器件，其特征在于，具有第一导电型的第一层，比第一层的禁带宽的有源层，以及具有比第一导电类型更大的禁带宽度的第二导电类型的第二层， 活动层。 第二层包括平坦区域和条形突起结构。 在条状突起结构上形成具有比第二层折射率大的第二导电类型的条形光波导形成层。 形成第一导电型或高电阻的电流限制层，用于覆盖第二层的平坦区域的顶表面，第二层的突出结构的侧表面和光学器件的侧表面 波导形成层。 电流限制层的热膨胀系数与第二层的热膨胀系数之间的差在-4×10 -9 /℃至+ 4×10 -9 /℃的范围内。