公开(公告)号：US5362669A

公开(公告)日：1994-11-08

申请号：US80544

申请日：1993-06-24

申请人： John M. Boyd ,  Joseph P. Ellul ,  Sing P. Tay

发明人： John M. Boyd ,  Joseph P. Ellul ,  Sing P. Tay

IPC分类号： H01L21/76 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/762 ,  H01L21/763

CPC分类号： H01L21/31053 ,  H01L21/76229 ,  H01L21/763 ,  Y10S148/05

摘要： A method is provided for forming a fully planarized trench isolated region in a semiconductor substrate for an integrated circuit, for example, a trench isolated field oxide region, or a trench isolated semiconductor region in which thin film semiconductor devices are formed. Planarization is accomplished by a chemical mechanical polishing process in which coplanar layers of a chemical mechanical polish resistant material are provided in a centre region of wide trenches as well as on the semiconductor substrate surface adjacent the trenches. The chemical mechanical polish resistant layer in the centre region of a wide trench forms an etch stop to prevent dishing of layers filling the trench during overall wafer planarization by chemical mechanical polishing. The method is compatible with CMOS, Bipolar and Bipolar CMOS processes for submicron VLSI and ULSI integrated circuit structures.

摘要翻译： 提供了一种用于在用于集成电路的半导体衬底中形成完全平坦化的沟槽隔离区域的方法，例如沟槽隔离场氧化物区域或其中形成薄膜半导体器件的沟槽隔离半导体区域。 通过化学机械抛光工艺实现平面化，其中化学机械耐光材料的共面层设置在宽沟槽的中心区域以及邻近沟槽的半导体衬底表面上。 在宽沟槽的中心区域中的化学机械耐光层形成蚀刻停止件，以防止在通过化学机械抛光的整个晶片平面化期间填充沟槽的层的凹陷。 该方法兼容CMOS，双极和双极CMOS工艺，用于亚微米VLSI和ULSI集成电路结构。

公开(公告)号：US4924134A

公开(公告)日：1990-05-08

申请号：US232355

申请日：1988-08-15

申请人： Arnold E. Westlund, Jr. ,  John M. Boyd ,  Raymond T. Fleming

发明人： Arnold E. Westlund, Jr. ,  John M. Boyd ,  Raymond T. Fleming

IPC分类号： H01K1/26

CPC分类号： H01K1/26

摘要： An improved projector lamp with an internal reflector may be made by forming the reflector from pure aluminum, or an aluminum alloy not including amounts of vaporizable materials. Anodized aluminum is not used. A pure aluminum reflector is mechanically polished and chemically etched to attain a high level of reflectivity. The quality of the surface finish is retained by enclosing the reflector in an oxygen free lamp. The high purity aluminum acts as a getter for oxygen, and other detrimental contaminants, thereby tending to extend the lamp life and maintain lamp output. Since aluminum is lighter weight than the previous reflector materials, the lamps do not suffer as much breakage during manufacture and shipping.

摘要翻译： 具有内部反射器的改进的投影灯可以通过从纯铝形成反射器或不包括可蒸发材料量的铝合金制成。 不使用阳极氧化铝。 机械抛光和化学蚀刻纯铝反射器以获得高水平的反射率。 表面光洁度的质量通过将反射器包围在无氧灯中来保持。 高纯度铝作为氧气和其他有害污染物的吸气剂，从而趋于延长灯的寿命并维持灯的输出。 由于铝的重量比以前的反光材料重，因此在制造和运输过程中灯不会受到太多破坏。

公开(公告)号：US20130061887A1

公开(公告)日：2013-03-14

申请号：US13670305

申请日：2012-11-06

申请人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz C. Redeker ,  John M. Boyd

发明人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz C. Redeker ,  John M. Boyd

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

公开(公告)号：US08330072B2

公开(公告)日：2012-12-11

申请号：US12687106

申请日：2010-01-13

申请人： John M. Boyd ,  Fred C. Redeker

发明人： John M. Boyd ,  Fred C. Redeker

IPC分类号： B23K26/14 ,  B23K26/16

CPC分类号： H01L21/02052 ,  B08B3/04 ,  B23K26/1224 ,  B23K26/146 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67092 ,  H01L21/78

摘要： A substrate processing system includes a first, movable surface tension gradient device, a dicing device and a system controller. The first, movable surface tension gradient device is capable of supporting a first process within a first meniscus. The first meniscus being supported between the first surface tension gradient device and a first surface of the substrate. The first movable surface tension gradient device capable of being moved relative to the first surface of the substrate. The dicing device is oriented to a desired dicing location. The desired dicing location being encompassed by the meniscus. The system controller is coupled to the dicing device and the surface tension gradient device. The system controller includes a process recipe. A method for dicing a substrate is also described. The method of dicing a substrate including placing a substrate in a substrate dicing system, forming a meniscus between a proximity head and a first surface of the substrate, dicing the substrate at a desired dicing location and simultaneously capturing any particles and contaminants generated by dicing the substrate within the meniscus, the meniscus including the desired dicing location and moving the meniscus in a desired dicing direction.

摘要翻译： 基板处理系统包括第一可动表面张力梯度装置，切割装置和系统控制器。 第一可移动表面张力梯度装置能够支撑第一弯液面内的第一过程。 第一弯液面被支撑在第一表面张力梯度装置和基板的第一表面之间。 能够相对于基板的第一表面移动的第一可动表面张力梯度装置。 切割装置被定向到期望的切割位置。 期望的切割位置被弯液面包围。 系统控制器耦合到切割装置和表面张力梯度装置。 系统控制器包括处理配方。 还描述了用于切割基底的方法。 一种切割衬底的方法，包括将衬底放置在衬底切割系统中，在接近头部和衬底的第一表面之间形成弯液面，将衬底切割在期望的切割位置，同时捕获通过切割所产生的任何颗粒和污染物 底物在弯液面内，弯月面包括期望的切割位置，并且以期望的切割方向移动弯月面。

公开(公告)号：US08314027B2

公开(公告)日：2012-11-20

申请号：US13284709

申请日：2011-10-28

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： H01L21/30 ,  C25D1/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US07810513B1

公开(公告)日：2010-10-12

申请号：US11240974

申请日：2005-09-30

申请人： John M. Boyd ,  Fritz C. Redeker ,  Seokmin Yun

发明人： John M. Boyd ,  Fritz C. Redeker ,  Seokmin Yun

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  B08B3/123 ,  G03F7/30 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

摘要： An apparatus for preparing a substrate is provided. The apparatus includes a proximity head and a megasonic proximity head. The proximity head is configured to be applied to a substrate frontside and is capable of generating a preparation meniscus on the substrate frontside. The preparation meniscus includes a preparation chemistry that is configured to remove a material defined on the substrate frontside. The megasonic proximity head is configured to be applied to a substrate backside, and is capable of generating a coupling meniscus on the substrate backside. The megasonic proximity head is further capable of imparting megasonic energy to the coupling meniscus. The megasonic energy imparted to the coupling meniscus is configured to enhance a mass transport of the preparation chemistry through a material to be removed on the substrate frontside.

摘要翻译： 提供了一种用于制备基底的装置。 该装置包括接近头和兆欧声接近头。 接近头被配置为施加到衬底前侧，并且能够在衬底前侧产生制备弯液面。 制备弯液面包括制备化学物质，其被配置为去除在衬底前侧限定的材料。 兆声波接近头被配置为施加到衬底背面，并且能够在衬底背面上产生耦合弯液面。 兆声道接近头还能够将兆声波能量传递给耦合弯液面。 赋予耦合弯液面的兆声波能量被配置为增强准备化学物质通过待在基板前侧去除的材料的质量传递。

公开(公告)号：US07648616B1

公开(公告)日：2010-01-19

申请号：US11394777

申请日：2006-03-31

申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  Robert Maraschin

发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  Robert Maraschin

IPC分类号： C25F7/00 ,  C25B9/08

CPC分类号： C25F7/00 ,  H01L21/67011

摘要： A number of apertures are defined within a wall of a chamber defined to maintain an electrolyte solution. A cation exchange membrane is disposed within the chamber over the number of apertures. The electrolyte solution pressure within the chamber causes the cation exchange membrane to extend through the apertures beyond an outer surface of the chamber. A cathode is disposed within the chamber. The cathode is maintained at a negative bias voltage relative to a top surface of a wafer to be planarized. When the top surface of the wafer is brought into proximity of the cation exchange membrane extending through the apertures, and a deionized water layer is disposed between the top surface of the wafer and the cation exchange membrane, a cathode half-cell is established such that metal cations are liberated from the top surface of the wafer and plated on the cathode in the chamber.

摘要翻译： 在限定为维持电解质溶液的室的壁内限定了许多孔。 阳离子交换膜在腔室内设置多个孔。 室内的电解质溶液压力导致阳离子交换膜延伸穿过孔超过室的外表面。 阴极设置在室内。 阴极相对于要平坦化的晶片的顶表面保持在负偏压。 当晶片的顶表面靠近延伸穿过孔的阳离子交换膜，并且在晶片的顶表面和阳离子交换膜之间设置去离子水层时，建立阴极半电池，使得 金属阳离子从晶片的顶表面释放并镀在腔室中的阴极上。

公开(公告)号：US20090321250A1

公开(公告)日：2009-12-31

申请号：US12554860

申请日：2009-09-04

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D21/12

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据被控制器使用以保持由阳极施加的基本恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US20090320749A1

公开(公告)日：2009-12-31

申请号：US12555736

申请日：2009-09-08

申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

IPC分类号： B05C11/00

CPC分类号： C23C16/54 ,  C23C16/45544 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873

摘要： An integrated system for depositing films on a substrate for copper interconnect is provided. The system includes a processing chamber with a plurality of proximity heads, and a vacuum transfer module coupled to the processing chamber. Selected ones of the proximity heads are used for surface treatments and atomic layer depositions (ALDs). The system further includes a processing module for copper seed layer deposition, which is integrated with a rinse/dryer to enable dry-in/dry-out process capability and is filled with an inert gas to limit the exposure of the substrate to oxygen. Additionally, the system includes a controlled-ambient transfer module coupled to the processing module for copper seed layer deposition. Further, the system includes a loadlock coupled to the vacuum transfer module and to the controlled-ambient transfer module. The integrated system enables controlled-ambient transitions within the system to limit exposure of the substrate to uncontrolled ambient conditions outside of the system.

摘要翻译： 提供了一种用于在铜互连的衬底上沉积膜的集成系统。 该系统包括具有多个接近头的处理室和耦合到处理室的真空传递模块。 所选择的接近头用于表面处理和原子层沉积（ALD）。 该系统还包括用于铜种子层沉积的处理模块，其与冲洗/干燥器集成以实现干/干工艺能力，并且填充惰性气体以限制衬底暴露于氧气。 此外，该系统包括耦合到用于铜种子层沉积的处理模块的受控环境转移模块。 此外，该系统包括耦合到真空传递模块和受控环境传输模块的负载锁。 集成系统使系统内的受控环境转换能够将衬底的暴露限制在系统外部的不受控制的环境条件下。

公开(公告)号：US07615486B2

公开(公告)日：2009-11-10

申请号：US11736522

申请日：2007-04-17

申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

IPC分类号： H01L21/4763

CPC分类号： C23C16/54 ,  C23C16/45544 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873

摘要： A method and system for depositing films on a substrate for copper interconnect in an integrated system are provided to enable controlled-ambient transitions within an integrated system to limit exposure of the substrate to uncontrolled ambient conditions. The method includes moving the substrate into a processing chamber having a plurality of proximity heads. Within the processing chamber, barrier layer deposition is performed over a surface of the substrate using one of the plurality of proximity heads functioning to perform barrier layer ALD. In addition, the method includes moving the substrate from the processing chamber, through a transfer module of the integrated systems, into a processing module for performing copper seed layer deposition. Within the processing module for performing copper seed layer deposition, copper seed layer deposition is performed over the surface of the substrate. The processing chamber for performing the barrier layer ALD and the processing module for performing the copper seed layer deposition are parts of the integrated system.

摘要翻译： 提供了一种用于在集成系统中的用于铜互连的衬底上沉积膜的方法和系统，以使集成系统内的受控环境转变能够限制衬底暴露于不受控制的环境条件。 该方法包括将衬底移动到具有多个接近头的处理室中。 在处理室内，使用用于执行阻挡层ALD的多个邻近头之一，在衬底的表面上进行阻挡层沉积。 此外，该方法包括将基板从处理室通过集成系统的传递模块移动到用于执行铜种子层沉积的处理模块中。 在用于进行铜种子层沉积的处理模块内，在衬底的表面上进行铜籽晶层沉积。 用于执行阻挡层ALD的处理室和用于执行铜种子层沉积的处理模块是集成系统的一部分。